Chin. J. Semicond. > 2007, Volume 28?>?Issue 6?> 856-859

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Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells

Liu Linsheng, Liu Su, Wang Wenxin, Zhao Hongming, Liu Baoli, Gao Hanchao, Jiang Zhongwei, Wang Jia, Huang Qing'an, Chen Hong and Zhou Junming

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Abstract: GaAs/AlGaAs (110) multiple quantum wells (MQWs) were grown by solid source molecular beam epitaxy (MBE) with a valved arsenic cracker cell. The optical properties of the undoped GaAs (110) MQWs were studied by low-temperature photoluminescence and time-resolved photoluminescence (TRPL), which show that a strong electron spin relaxation dynamic is dependent on the excitation power and wavelength at room temperature. In this material, the predominant spin scattering mechanism ［D'yakonov-Perel' (DP) mechanism］ for conventional (100) QWs is substantially suppressed. The experiment data indicate that the electron-hole exchange interaction has a great impact on the spin relaxation time in GaAs (110) MQWs at room temperature.

Key words: electron spin relaxation,  multiple quantum wells,  molecular beam epitaxy

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    Received: 18 August 2015 Revised: 03 April 2007 Online: Published: 01 June 2007

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      Liu Linsheng, Liu Su, Wang Wenxin, Zhao Hongming, Liu Baoli, Gao Hanchao, Jiang Zhongwei, Wang Jia, Huang Qing'an, Chen Hong, Zhou Junming. Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells[J]. Journal of Semiconductors, 2007, 28(6): 856-859. ****Liu L S, Liu S, Wang W X, Zhao H M, Liu B L, Gao H C, Jiang Z W, Wang J, Huang Q, Chen H, Zhou J M. Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells[J]. Chin. J. Semicond., 2007, 28(6): 856.
      Citation:
      Liu Linsheng, Liu Su, Wang Wenxin, Zhao Hongming, Liu Baoli, Gao Hanchao, Jiang Zhongwei, Wang Jia, Huang Qing'an, Chen Hong, Zhou Junming. Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells[J]. Journal of Semiconductors, 2007, 28(6): 856-859. ****
      Liu L S, Liu S, Wang W X, Zhao H M, Liu B L, Gao H C, Jiang Z W, Wang J, Huang Q, Chen H, Zhou J M. Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells[J]. Chin. J. Semicond., 2007, 28(6): 856.

      Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells

      • School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • Key Laboratory of the Ministry of Educa

      • School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

      • Key Laboratory of the Ministry of Education of MEMS, Southeast University, Nanjing 210096, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-02-14
      • Revised Date: 2007-04-03
      • Published Date: 2007-05-30

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