Chin. J. Semicond. > 2007, Volume 28?>?Issue 6?> 860-864

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Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys

Xiong Deping, Ren Xiaomin, Wang Qi, Shu Wei, Zhou Jing, Lü Jihe, Huang Hui and Huang Yongqing

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Abstract: The band gaps of ternary zinc blende BxIn1-xP and BxGa1-xP alloys are calculated using first principles in the generalized gradient approximation (GGA),and their bowing parameters are obtained.For BxIn1-xP,the bowing parameters are b_Eg(Γ)=4.32eV and b_Eg(X)=1.8eV,the crossover composition from direct to indirect gap is 0.47,the direct gap varies from 1.33 to 1.47eV,and the addition of a small amount of B will reduce the alloy gap.For BxGa1-xP,the whole x range is indirect gap,and the bowing parameters are b_Eg(Γ)=1.37eV and b_Eg(X)=2.46eV.The reason that BxIn1-xP and BxGa1-xP have relatively large bowing parameters is the large lattice mismatch between their binary alloys.

Key words: boride alloy, bowing parameter, band-gap, GGA

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    Received: 18 August 2015 Revised: 26 January 2007 Online: Published: 01 June 2007

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      Xiong Deping, Ren Xiaomin, Wang Qi, Shu Wei, Zhou Jing, Lü Jihe, Huang Hui, Huang Yongqing. Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys[J]. Journal of Semiconductors, 2007, 28(6): 860-864. ****Xiong D P, Ren X M, Wang Q, Shu W, Zhou J, Lü J, Huang H, Huang Y Q. Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys[J]. Chin. J. Semicond., 2007, 28(6): 860.
      Citation:
      Xiong Deping, Ren Xiaomin, Wang Qi, Shu Wei, Zhou Jing, Lü Jihe, Huang Hui, Huang Yongqing. Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys[J]. Journal of Semiconductors, 2007, 28(6): 860-864. ****
      Xiong D P, Ren X M, Wang Q, Shu W, Zhou J, Lü J, Huang H, Huang Y Q. Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys[J]. Chin. J. Semicond., 2007, 28(6): 860.

      Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys

      • Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education,Beijing 100876,China

      • Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education,Beijing 100876,China

      • Institute of Continuing Education,Beijing University of Posts and Telecommunications,Beijing 100876,China

      • Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education,Beijing 100876,China

      • Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education,Beijing 100876,China

      • Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education,Beijing 100876,China

      • Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education,Beijing 100876,China

      • Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education,Beijing 100876,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-02
      • Revised Date: 2007-01-26
      • Published Date: 2007-05-30

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