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J. Semicond. > 2008, Volume 29?>?Issue 4?> 668-671

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1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs

Xu Jingbo, Li Ming, Zhang Haiying, Wang Wenxin, Yin Junjian, Liu Liang, Li Xiao, Zhang Jian and Ye Tianchun

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Abstract: 1.0μm gate-length GaAs-based MHEMTs have been fabricated by MBE epitaxial material and contact-mode lithography technology.Pt/Ti/Pt/Au and Ti/Pt/Au were evaporated to form gate metals.Excellent DC and RF performances have been obtained,and the transconductance,maximum saturation drain current density,threshold voltage,current cut-off frequency,and maximum oscillation frequency of Pt/Ti/Pt/Au and Ti/Pt/Au MHEMTs were 502(503)mS/mm,382(530)mA/mm,0.1(-0.5)V,13.4(14.8)GHz,and 17.0(17.5)GHz,respectively.DC-10GHz single-pole double-throw (SPDT) switch MMICs have been designed and fabricated by Ti/Pt/Au MHEMTs.Insertion loss,isolation,input,and output return losses of SPDT chips were better than 2.93,23.34,and 20dB.

Key words: MHEMT, Pt/Ti/Pt/Au, Ti/Pt/Au, SPDT, MMIC

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    Received: 18 August 2015 Revised: 19 November 2007 Online: Published: 01 April 2008

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      Xu Jingbo, Li Ming, Zhang Haiying, Wang Wenxin, Yin Junjian, Liu Liang, Li Xiao, Zhang Jian, Ye Tianchun. 1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs[J]. Journal of Semiconductors, 2008, 29(4): 668-671. ****Xu J B, Li M, Zhang H Y, Wang W X, Yin J J, Liu L, Li X, Zhang J, Ye T C. 1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs[J]. J. Semicond., 2008, 29(4): 668.
      Citation:
      Xu Jingbo, Li Ming, Zhang Haiying, Wang Wenxin, Yin Junjian, Liu Liang, Li Xiao, Zhang Jian, Ye Tianchun. 1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs[J]. Journal of Semiconductors, 2008, 29(4): 668-671. ****
      Xu J B, Li M, Zhang H Y, Wang W X, Yin J J, Liu L, Li X, Zhang J, Ye T C. 1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs[J]. J. Semicond., 2008, 29(4): 668.

      1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-01
      • Revised Date: 2007-11-19
      • Published Date: 2008-04-03

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