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J. Semicond. > 2008, Volume 29?>?Issue 4?> 663-667

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The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures

Miao Qinghai, Lu Shuojin, Zhang Xinghua, Zong Fujian and Zhu Yangjun

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Abstract: The I-V-(T) characteristic curves of p-n junctions with the forward voltage as the independent variable,the logarithm of forward current as the dependent variable,and the junction temperature as the parameter,almost converge at one point in the first quadrant.The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material.This convergence point can be used to obtain the I-V characteristic curve at any temperature.

Key words: semiconductor barrier, bandgap, convergent point, forward I-V characteristic curves

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    Received: 18 August 2015 Revised: 02 December 2007 Online: Published: 01 April 2008

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      Miao Qinghai, Lu Shuojin, Zhang Xinghua, Zong Fujian, Zhu Yangjun. The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures[J]. Journal of Semiconductors, 2008, 29(4): 663-667. ****Miao Q H, Lu S J, Zhang X H, Zong F J, Zhu Y J. The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures[J]. J. Semicond., 2008, 29(4): 663.
      Citation:
      Miao Qinghai, Lu Shuojin, Zhang Xinghua, Zong Fujian, Zhu Yangjun. The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures[J]. Journal of Semiconductors, 2008, 29(4): 663-667. ****
      Miao Q H, Lu S J, Zhang X H, Zong F J, Zhu Y J. The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures[J]. J. Semicond., 2008, 29(4): 663.

      The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures

      • School of Physics and Microelectronics,Shandong University,Jinan 250100,China

      • School of Physics and Microelectronics,Shandong University,Jinan 250100,China

      • School of Physics and Microelectronics,Shandong University,Jinan 250100,China

      • School of Physics and Microelectronics,Shandong University,Jinan 250100,China

      • School of Physics and Microelectronics,Shandong University,Jinan 250100,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-29
      • Revised Date: 2007-12-02
      • Published Date: 2008-04-03

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