Chin. J. Semicond. > 2007, Volume 28?>?Issue 7?> 1097-1103

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Study on ICP Etching Induced Damage in p-GaN

Gong Xin, Lü Ling, Hao Yue, Li Peixian, Zhou Xiaowei and Chen Haifeng

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Abstract: The plasma-induced damage for p-GaN by inductively coupled plasma(ICP) etching with Cl2/N2 gas chemistry was studied.Effects of ICP power,RF power,chamber pressure,and Cl2 percentage on the physical and electrical characteristics of p-GaN were investigated.The results show that the surface roughness is relatively independent of these etching conditions and shows fairly smooth morphology (RMS＜1.2nm);the surface morphology has no direct effect on the electrical characteristics of p-GaN,and the deterioration of ohmic contact to the etched p-GaN is due to a decrease in hole concentration in the near-surface region through the creation of shallow donor states rather than surface roughening.

Key words: GaN, inductively coupled plasma etching, plasma damage

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    Received: 18 August 2015 Revised: 26 January 2007 Online: Published: 01 July 2007

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      Gong Xin, Lü Ling, Hao Yue, Li Peixian, Zhou Xiaowei, Chen Haifeng. Study on ICP Etching Induced Damage in p-GaN[J]. Journal of Semiconductors, 2007, 28(7): 1097-1103. ****Gong X, Lü L, Hao Y, Li P X, Zhou X W, Chen H F. Study on ICP Etching Induced Damage in p-GaN[J]. Chin. J. Semicond., 2007, 28(7): 1097.
      Citation:
      Gong Xin, Lü Ling, Hao Yue, Li Peixian, Zhou Xiaowei, Chen Haifeng. Study on ICP Etching Induced Damage in p-GaN[J]. Journal of Semiconductors, 2007, 28(7): 1097-1103. ****
      Gong X, Lü L, Hao Y, Li P X, Zhou X W, Chen H F. Study on ICP Etching Induced Damage in p-GaN[J]. Chin. J. Semicond., 2007, 28(7): 1097.

      Study on ICP Etching Induced Damage in p-GaN

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-12-13
      • Revised Date: 2007-01-26
      • Published Date: 2007-07-05

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