Chin. J. Semicond. > 2007, Volume 28?>?Issue 7?> 1104-1106

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13.7～14.5GHz Internally-Matched GaAs High Power Device

Wu Xiaoshuai, Yang Ruixia, Yan Deli, Liu Yuewei, Jia Kejin, He Dawei and Yang Kewu

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Abstract: A 19.2mm gate-width GaAs power HFET has been fabricated with improvements in the technology of device structure and passivation.The internally-matched device with two chips yields an output power greater than 42dBm(158W) with more than 7dB power gain,more than 35% PAE,and more than 90% co-efficiency across the band of 13.7～14.5GHz with Vds=9V and Pin=35dBm.At 14.3GHz,an output power of 42.54dBm (17.9W) and power gain of 7.54dB were achieved.

Key words: device, internally matching, HFET, power combination

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    Received: 18 August 2015 Revised: 29 January 2007 Online: Published: 01 July 2007

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      Wu Xiaoshuai, Yang Ruixia, Yan Deli, Liu Yuewei, Jia Kejin, He Dawei, Yang Kewu. 13.7～14.5GHz Internally-Matched GaAs High Power Device[J]. Journal of Semiconductors, 2007, 28(7): 1104-1106. ****Wu X S, Yang R X, Yan D L, Liu Y W, Jia K J, He D W, Yang K W. 13.7～14.5GHz Internally-Matched GaAs High Power Device[J]. Chin. J. Semicond., 2007, 28(7): 1104.
      Citation:
      Wu Xiaoshuai, Yang Ruixia, Yan Deli, Liu Yuewei, Jia Kejin, He Dawei, Yang Kewu. 13.7～14.5GHz Internally-Matched GaAs High Power Device[J]. Journal of Semiconductors, 2007, 28(7): 1104-1106. ****
      Wu X S, Yang R X, Yan D L, Liu Y W, Jia K J, He D W, Yang K W. 13.7～14.5GHz Internally-Matched GaAs High Power Device[J]. Chin. J. Semicond., 2007, 28(7): 1104.

      13.7～14.5GHz Internally-Matched GaAs High Power Device

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • School of Information Engineering,Hebei University of Technology,Tianjin 300130,China

      • Electric Department, Shijiazhuang Railway Institute,Shijiazhuang 050051,China

      • Electric Department, Shijiazhuang Railway Institute,Shijiazhuang 050051,China

      • School of Information Engineering,Hebei University of Technology,Tianjin 300130,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-03
      • Revised Date: 2007-01-29
      • Published Date: 2007-07-05

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