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J. Semicond. > 2008, Volume 29?>?Issue 4?> 746-750

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A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos

Luan Suzhen, Liu Hongxia, Jia Renxu and Wang Jin

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Abstract: A two-dimensional (2D) model for the subthreshold current in a dual-material gate silicon-on-insulator (SOI) MOSFET with a single halo is presented.The model considers a single halo doping in the channel near the source and a dual material gate to derive the channel potential using the explicit solution of the 2D Poisson’s equation.This,together with conventional drift-diffusion theory,results in the development of a subthreshold current model for the novel structure.Model verification is carried out using the 2D device simulator ISE.Good agreement is obtained between the model’s calculations and the simulated results.

Key words: dual material gate, SOI MOSFET, subthreshold current, 2D modeling

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    Received: 18 August 2015 Revised: 08 October 2007 Online: Published: 01 April 2008

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      Luan Suzhen, Liu Hongxia, Jia Renxu, Wang Jin. A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos[J]. Journal of Semiconductors, 2008, 29(4): 746-750. ****Luan S Z, Liu H X, Jia R X, Wang J. A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos[J]. J. Semicond., 2008, 29(4): 746.
      Citation:
      Luan Suzhen, Liu Hongxia, Jia Renxu, Wang Jin. A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos[J]. Journal of Semiconductors, 2008, 29(4): 746-750. ****
      Luan S Z, Liu H X, Jia R X, Wang J. A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos[J]. J. Semicond., 2008, 29(4): 746.

      A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-13
      • Revised Date: 2007-10-08
      • Published Date: 2008-04-03

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