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J. Semicond. > 2008, Volume 29?>?Issue 4?> 741-745

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An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs

Zhou Shouli and Ren Xiaomin

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Abstract: In this paper,we investigate the importance of including recombination in the base side of the emitter-base space-charge-region(SCR) in the current continuity equation when computing the current gain in abrupt HBTs.Based on the thermionic field-diffusion model,new analytical expressions for the terminal currents are proposed.These new expressions are more accurate in predicting the performance of HBTs operating at high collector current density because of the inclusion of the recombination currents in the current continuity equation.

Key words: HBTsthermionic-field-diffusionrecombination currentscurrent continuity equation

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    Received: 18 August 2015 Revised: 05 November 2007 Online: Published: 01 April 2008

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      Zhou Shouli, Ren Xiaomin. An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs[J]. Journal of Semiconductors, 2008, 29(4): 741-745. ****Zhou S L, Ren X M. An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs[J]. J. Semicond., 2008, 29(4): 741.
      Citation:
      Zhou Shouli, Ren Xiaomin. An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs[J]. Journal of Semiconductors, 2008, 29(4): 741-745. ****
      Zhou S L, Ren X M. An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs[J]. J. Semicond., 2008, 29(4): 741.

      An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-29
      • Revised Date: 2007-11-05
      • Published Date: 2008-04-03

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