Abstract: This paper presents a new power generation structure that can provide DC energy for passive UHF RFID with high sensitivity and high efficiency.The structure is designed with 0.18μm standard CMOS technology, including two charge pumps, a current reference, and a group of bias circuits.Low-voltage performance is improved thanks to the bias structure, which eliminates the threshold voltage drop and body-effect of conventional circuits.A 350mV minimum input level is required to generate a 1.5V power supply for a 100kΩ load with power conversion efficiency (PCE) of 22%.PCE up to 29.8% is achieved with a 60kΩ load.Simulation results show that the new circuit is superior to conventional charge pumps.

Key words: UHF RFID, power generation, charge pump, low voltage, CMOS