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J. Semicond. > 2008, Volume 29?>?Issue 2?> 288-292

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A Novel Technique for Improving Temperature Independence of Ring-ADCs

Li Shun, Chen Hua and Zhou Feng

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Abstract: A new temperature compensation technique for ring-oscillator-based ADCs is proposed.This technique employs a novel, fixed-number-based algorithm and CTAT current biasing technology to compensate the temperature-dependent variations of the output, thus eliminating the need for digital calibrations.Simulation results prove that, with the proposed technique, the resolution in the temperature range of 0 to 100℃ can reach a 2mV quantization bin size with an input voltage span of 120mV at the sampling frequency of fs=100kHz.

Key words: ring ADC, CTAT, temperature compensation, VLSI

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    Received: 18 August 2015 Revised: 23 September 2007 Online: Published: 01 February 2008

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      Li Shun, Chen Hua, Zhou Feng. A Novel Technique for Improving Temperature Independence of Ring-ADCs[J]. Journal of Semiconductors, 2008, 29(2): 288-292. ****Li S, Chen H, Zhou F. A Novel Technique for Improving Temperature Independence of Ring-ADCs[J]. J. Semicond., 2008, 29(2): 288.
      Citation:
      Li Shun, Chen Hua, Zhou Feng. A Novel Technique for Improving Temperature Independence of Ring-ADCs[J]. Journal of Semiconductors, 2008, 29(2): 288-292. ****
      Li S, Chen H, Zhou F. A Novel Technique for Improving Temperature Independence of Ring-ADCs[J]. J. Semicond., 2008, 29(2): 288.

      A Novel Technique for Improving Temperature Independence of Ring-ADCs

      • State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China

      • State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China

      • State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-04
      • Revised Date: 2007-09-23
      • Published Date: 2008-01-31

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