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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1334-1337

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Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO

He Jinxiao, Duan Yao, Wang Xiaofeng, Cui Junpeng, Zeng Yiping and Li Jinmin

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Abstract: High quality ZnO film of about 10μm thick has been successfully grown on a ZnAl2O4 buffer layer via metal vapor phase epitaxy (MVPE).The ZnAl2O4 buffer layer was prepared by high temperature annealing ZnO thin film grown by the sol-gel method.Double crystal x-ray diffraction (DCXRD) analysis indicates that unwanted orientations in the film are eliminated using the buffer layer and that the full width at half maximum (FWHM) of the (0002) rocking curve dramatically drops from 1371" to 342" .To our knowledge,this is the first report that a ZnAl2O4 buffer layer can enhance the quality of ZnO film grown by metal vapor phase epitaxy.

Key words: ZnO crystal thick film, MVPE, ZnAl2O4 buffer layer, sol-gel process,  ZnO-Al2O3 solid solution, DCXRD

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    Received: 18 August 2015 Revised: 04 January 2008 Online: Published: 01 July 2008

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      He Jinxiao, Duan Yao, Wang Xiaofeng, Cui Junpeng, Zeng Yiping, Li Jinmin. Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO[J]. Journal of Semiconductors, 2008, 29(7): 1334-1337. ****He J X, Duan Y, Wang X F, Cui J P, Zeng Y P, Li J M. Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO[J]. J. Semicond., 2008, 29(7): 1334.
      Citation:
      He Jinxiao, Duan Yao, Wang Xiaofeng, Cui Junpeng, Zeng Yiping, Li Jinmin. Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO[J]. Journal of Semiconductors, 2008, 29(7): 1334-1337. ****
      He J X, Duan Y, Wang X F, Cui J P, Zeng Y P, Li J M. Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO[J]. J. Semicond., 2008, 29(7): 1334.

      Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO

      • Key Laboratory of Semiconductor Materials,Institute of Semiconductors,Chinese Academy of Science,Beijing 100083,China

      • Semiconductor Lighting Research and Development Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083, China

      • Key Laboratory of Semiconductor Materials,Institute of Semiconductors,Chinese Academy of Science,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials,Institute of Semiconductors,Chinese Academy of Science,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials,Institute of Semiconductors,Chinese Academy of Science,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials,Institute of Semiconductors,Chinese Academy of Science,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-22
      • Revised Date: 2008-01-04
      • Published Date: 2008-08-01

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