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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1338-1341

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MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD

Dong Xin, Zhao Wang, Zhang Yuantao, Zhang Baolin, Li Xiangping and Du Guotong

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Abstract: A MgZnO/ZnO p-n heterojunction was grown on GaAs substrate by metal-organic chemical vapor deposition.The I-Vcharacteristics showed a diode characteristic between the n-ZnO and p-MgZnO layers with a threshold voltage of 3.6V.When the injection current attained 50 mA,the emission was visible to the naked eye in the dark.Room temperature measurements,such as the HALL,XRD,PL,and EL spectra were carried out.The PL spectra of the n-ZnO and p-MgZnO layers both showed strong NBE peaks and weak broad DLE peaks.The EL spectra of the junction under different injection current all showed strong broad DLE peaks from 450 to 550nm,attributed to the deep-level transition.

Key words: MOCVD, ZnO, MgZnO, heterojunction, EL

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    Received: 18 August 2015 Revised: 21 December 2007 Online: Published: 01 July 2008

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      Dong Xin, Zhao Wang, Zhang Yuantao, Zhang Baolin, Li Xiangping, Du Guotong. MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD[J]. Journal of Semiconductors, 2008, 29(7): 1338-1341. ****Dong X, Zhao W, Zhang Y T, Zhang B L, Li X P, Du G T. MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD[J]. J. Semicond., 2008, 29(7): 1338.
      Citation:
      Dong Xin, Zhao Wang, Zhang Yuantao, Zhang Baolin, Li Xiangping, Du Guotong. MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD[J]. Journal of Semiconductors, 2008, 29(7): 1338-1341. ****
      Dong X, Zhao W, Zhang Y T, Zhang B L, Li X P, Du G T. MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD[J]. J. Semicond., 2008, 29(7): 1338.

      MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD

      • School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116033,China

      • State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China

      • State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China

      • State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China

      • State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China

      • School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116033,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-12
      • Revised Date: 2007-12-21
      • Published Date: 2008-08-01

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