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J. Semicond. > 2008, Volume 29?>?Issue 6?> 1160-1163

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Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD

Guo Xuejun, Lu Jingxiao, Wen Shutang, Yang Gen, Chen Yongsheng, Zhang Qingfeng and Gu Jinhua

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Abstract: μc-Si:H films were deposited under different power density by VHF-PECVD.The microstructure of the films was investigated.The effect of power density on the deposition rate and crystallization of μc-Si:H was studied extensively.This study shows that as the power density increased,the deposition rate first increased gradually and then saturated.The thickness of the incubation layer and the nucleation density varied with power density.

Key words: μc-Si: H,  VHF-PECVD,  power density,  incubation layer,  nucleation density

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    Received: 18 August 2015 Revised: 27 November 2007 Online: Published: 01 June 2008

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      Guo Xuejun, Lu Jingxiao, Wen Shutang, Yang Gen, Chen Yongsheng, Zhang Qingfeng, Gu Jinhua. Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD[J]. Journal of Semiconductors, 2008, 29(6): 1160-1163. ****Guo X J, Lu J X, Wen S T, Yang G, Chen Y S, Zhang Q F, Gu J H. Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD[J]. J. Semicond., 2008, 29(6): 1160.
      Citation:
      Guo Xuejun, Lu Jingxiao, Wen Shutang, Yang Gen, Chen Yongsheng, Zhang Qingfeng, Gu Jinhua. Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD[J]. Journal of Semiconductors, 2008, 29(6): 1160-1163. ****
      Guo X J, Lu J X, Wen S T, Yang G, Chen Y S, Zhang Q F, Gu J H. Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD[J]. J. Semicond., 2008, 29(6): 1160.

      Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD

      • Key Laboratory of Materials Physics of Ministry of Education,Zhengzhou University,Zhengzhou 450052,China

      • Key Laboratory of Materials Physics of Ministry of Education,Zhengzhou University,Zhengzhou 450052,China

      • Key Laboratory of Materials Physics of Ministry of Education,Zhengzhou University,Zhengzhou 450052,China

      • Key Laboratory of Materials Physics of Ministry of Education,Zhengzhou University,Zhengzhou 450052,China

      • Key Laboratory of Materials Physics of Ministry of Education,Zhengzhou University,Zhengzhou 450052,China

      • Key Laboratory of Materials Physics of Ministry of Education,Zhengzhou University,Zhengzhou 450052,China

      • Key Laboratory of Materials Physics of Ministry of Education,Zhengzhou University,Zhengzhou 450052,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-25
      • Revised Date: 2007-11-27
      • Published Date: 2008-06-03

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