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J. Semicond. > 2008, Volume 29?>?Issue 6?> 1156-1159

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High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs

Zhang Guoyu, Xiu Xiangqian, Zhang Rong, Tao Zhikuo, Cui Xugao, Zhang Jiachen, Xie Zili, Xu Xiaonong and Zheng Youdou

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Abstract: High-pressure and high-temperature are used to treat a series of Co doped ZnO samples synthesized by Sol-gel method.Structure and composition analyses suggest that CoO is formed after increasing the Co concentration under the high-pressure condition.The results of magnetism measurements by SQUID show that all the samples have room-temperature ferromagnetism and the ferromagnetism increases as the Co doping concentration increases,despite the formation of antiferromagnetic CoO under the high pressure condition.Thus,we argue that the ferromagnetism of ZnCoO is intrinsic.

Key words: high-pressure, high-temperature, ZnO DMS

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    Received: 18 August 2015 Revised: 11 January 2008 Online: Published: 01 June 2008

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      Zhang Guoyu, Xiu Xiangqian, Zhang Rong, Tao Zhikuo, Cui Xugao, Zhang Jiachen, Xie Zili, Xu Xiaonong, Zheng Youdou. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. Journal of Semiconductors, 2008, 29(6): 1156-1159. ****Zhang G Y, Xiu X Q, Zhang R, Tao Z K, Cui X G, Zhang J C, Xie Z L, Xu X N, Zheng Y D. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. J. Semicond., 2008, 29(6): 1156.
      Citation:
      Zhang Guoyu, Xiu Xiangqian, Zhang Rong, Tao Zhikuo, Cui Xugao, Zhang Jiachen, Xie Zili, Xu Xiaonong, Zheng Youdou. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. Journal of Semiconductors, 2008, 29(6): 1156-1159. ****
      Zhang G Y, Xiu X Q, Zhang R, Tao Z K, Cui X G, Zhang J C, Xie Z L, Xu X N, Zheng Y D. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. J. Semicond., 2008, 29(6): 1156.

      High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-19
      • Revised Date: 2008-01-11
      • Published Date: 2008-06-05

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