Chin. J. Semicond. > 2007, Volume 28?>?Issue 11?> 1773-1776

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A Recessed AlGaN/GaN HEMT with High Output Power in the X Band

Feng Zhen, Zhang Zhiguo, Wang Yong, Mo Jianghui, Song Jianbo, Feng Zhihong, Cai Shujun and Yang Kewu

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Abstract: A high output power recessed AlGaN/GaN HEMT on SiC substrate is fabricated.With the optimized process,the specific contact resistance is less than 1.0e-6Ω·cm2,the current collapse parameter is less than 10%,and the breakdown voltage is more than 80V.For the short gate-wide device,the operation voltage is up to 40V,and the output power density is more than 10W/mm at 8GHz.For the single-cell device,the output power is 12.3W at 8GHz,the gain is 4.9dB,and the PAE is 35%.For the four-cell internally matched device with 8mm total-gate,33.8W output power is achieved at 8GHz,the gain is 6.3dB,and the PAE is 41.77%.The output power of single-cell and internally matched devices are currently the best in mainland China.

Key words: AlGaN/GaN HEMT, high output power density, internally matched device

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    Received: 18 August 2015 Revised: 29 May 2007 Online: Published: 01 November 2007

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      Feng Zhen, Zhang Zhiguo, Wang Yong, Mo Jianghui, Song Jianbo, Feng Zhihong, Cai Shujun, Yang Kewu. A Recessed AlGaN/GaN HEMT with High Output Power in the X Band[J]. Journal of Semiconductors, 2007, 28(11): 1773-1776. ****Feng Z, Zhang Z G, Wang Y, Mo J H, Song J B, Feng Z H, Cai S J, Yang K W. A Recessed AlGaN/GaN HEMT with High Output Power in the X Band[J]. Chin. J. Semicond., 2007, 28(11): 1773.
      Citation:
      Feng Zhen, Zhang Zhiguo, Wang Yong, Mo Jianghui, Song Jianbo, Feng Zhihong, Cai Shujun, Yang Kewu. A Recessed AlGaN/GaN HEMT with High Output Power in the X Band[J]. Journal of Semiconductors, 2007, 28(11): 1773-1776. ****
      Feng Z, Zhang Z G, Wang Y, Mo J H, Song J B, Feng Z H, Cai S J, Yang K W. A Recessed AlGaN/GaN HEMT with High Output Power in the X Band[J]. Chin. J. Semicond., 2007, 28(11): 1773.

      A Recessed AlGaN/GaN HEMT with High Output Power in the X Band

      • The National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of CETC,Shijiazhuang 050051,China

      • The National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of CETC,Shijiazhuang 050051,China

      • School of Microelectronics,Xidian University,Xi'an 710071,China

      • The National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of CETC,Shijiazhuang 050051,China

      • The National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of CETC,Shijiazhuang 050051,China

      • The National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of CETC,Shijiazhuang 050051,China

      • The National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of CETC,Shijiazhuang 050051,China

      • The National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of CETC,Shijiazhuang 050051,China

      • The National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of CETC,Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-05-10
      • Revised Date: 2007-05-29
      • Published Date: 2007-10-24

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