Chin. J. Semicond. > 2007, Volume 28?>?Issue 11?> 1769-1772

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Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material

Wu Xiaoli, Wang Nili, Zhang Kefeng, Tang Hengjing, Huang Yimin, Han Bing, Li Xue and Gong Haimei

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Abstract: The lifetime mapping of a p＋-InP/n-InGaAs/n-InP double heterojunction wafer is measured by the microwave photoconductivity decay technique,and the mechanism of photoconductivity decay in this material is analyzed.Based on this analysis,the relationship between the measured lifetime and the device parameters is determined,and the abnormal change of lifetime with the decrease in temperature is explained.

Key words: InGaAs, double heterojunction, microwave reflection, photo conductivity decay

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    Received: 18 August 2015 Revised: 13 June 2007 Online: Published: 01 November 2007

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      Wu Xiaoli, Wang Nili, Zhang Kefeng, Tang Hengjing, Huang Yimin, Han Bing, Li Xue, Gong Haimei. Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material[J]. Journal of Semiconductors, 2007, 28(11): 1769-1772. ****Wu X L, Wang N L, Zhang K F, Tang H J, Huang Y M, Han B, Li X, Gong H M. Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material[J]. Chin. J. Semicond., 2007, 28(11): 1769.
      Citation:
      Wu Xiaoli, Wang Nili, Zhang Kefeng, Tang Hengjing, Huang Yimin, Han Bing, Li Xue, Gong Haimei. Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material[J]. Journal of Semiconductors, 2007, 28(11): 1769-1772. ****
      Wu X L, Wang N L, Zhang K F, Tang H J, Huang Y M, Han B, Li X, Gong H M. Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material[J]. Chin. J. Semicond., 2007, 28(11): 1769.

      Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-05-22
      • Revised Date: 2007-06-13
      • Published Date: 2007-10-24

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