Abstract: High-efficiency n-nc-Si∶H/p-c-Si heterojunction solar cells are fabricated by hot-wire chemical vapor deposition (HWCVD) at low temperatures.The effects of the crystalline fraction of nc-Si∶H,especially in the buffer layer,and hydrogen treatment time on the performance of the solar cells are investigated.The interface between nc-Si∶H and c-Si is examined by HRTEM.The influence of hydrogen dilution of the buffer layer on the structure of the interface is analyzed.By optimizing the deposition parameters,an nc-Si∶H/c-Si heterojunction solar cell with Jsc=40.8mA/cm2,Voc=576.3mV,FF=73.75%,and η=17.36% has been achieved on CZ single crystalline silicon.

Key words: nano-crystalline silicon, heterojunction, solar cells, HWCVD