Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 92-95

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Plasma-Induced Damage on 90nm-Technology MOSFETs

Tang Yu, Hao Yue, Meng Zhiqin and Ma Xiaohua

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Abstract: Plasma-induced damage on 90nm Cu dual Damascene technology devices is investigated.Experiments on the hot carrier stress for nMOSFETs and NBTI stress for pMOSFETs are conducted.The antenna ratio is still a standard for detecting plasma-induced damage.The via structure shows more plasma damage than other metal structures.This is explained by the via first dual Damascene process.

Key words: plasma-induced damage, antenna structure, via, Cu dual Damascene technology

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    Received: 18 August 2015 Revised: 07 September 2006 Online: Published: 01 January 2007

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      Tang Yu, Hao Yue, Meng Zhiqin, Ma Xiaohua. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Journal of Semiconductors, 2007, 28(1): 92-95. ****Tang Y, Hao Y, Meng Z Q, Ma X H. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Chin. J. Semicond., 2007, 28(1): 92.
      Citation:
      Tang Yu, Hao Yue, Meng Zhiqin, Ma Xiaohua. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Journal of Semiconductors, 2007, 28(1): 92-95. ****
      Tang Y, Hao Y, Meng Z Q, Ma X H. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Chin. J. Semicond., 2007, 28(1): 92.

      Plasma-Induced Damage on 90nm-Technology MOSFETs

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-16
      • Revised Date: 2006-09-07
      • Published Date: 2006-12-26

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