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J. Semicond. > 2008, Volume 29?>?Issue 8?> 1436-1440

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Preparation of (SiFe)C DMS Based 4H-SiC Substrate

Jiang Yanfeng and Wang Jianping

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Abstract: A diluted magnetic 4H-SiC has been prepared by implanting Fe ions into the substrate.Its Curie temperature reaches as high as 320K and its technology is compatible with current IC.Moreover,the process includes three annealing steps,named HNH annealing in this paper.Each step during this annealing has been analyzed.Comparisons have been made with different Fe concentrations and experimental results demonstrate that when the concentration of Fe is 0.051,the Curie temperature is the highest.According to measurements,some explanation of this phenomenon is given.

Key words: spintronics, diluted magnetic semiconductor, annealing, Curie temperature

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    Received: 18 August 2015 Revised: 07 April 2008 Online: Published: 01 August 2008

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      Jiang Yanfeng, Wang Jianping. Preparation of (SiFe)C DMS Based 4H-SiC Substrate[J]. Journal of Semiconductors, 2008, 29(8): 1436-1440. ****Jiang Y F, Wang J P. Preparation of (SiFe)C DMS Based 4H-SiC Substrate[J]. J. Semicond., 2008, 29(8): 1436.
      Citation:
      Jiang Yanfeng, Wang Jianping. Preparation of (SiFe)C DMS Based 4H-SiC Substrate[J]. Journal of Semiconductors, 2008, 29(8): 1436-1440. ****
      Jiang Y F, Wang J P. Preparation of (SiFe)C DMS Based 4H-SiC Substrate[J]. J. Semicond., 2008, 29(8): 1436.

      Preparation of (SiFe)C DMS Based 4H-SiC Substrate

      • Microelectronic Center,College of Information Engineering,North China University of Technology,Beijing 100041,China

      • Center for Micromagnetics and Information Technology,Department of Electrical and Computer Engineering,University of Minnesota,Minneapolis,

      • Center for Micromagnetics and Information Technology,Department of Electrical and Computer Engineering,University of Minnesota,Minneapolis,MN 55455, USA

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-02
      • Revised Date: 2008-04-07
      • Published Date: 2008-08-02

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