LETTERS
Ye Zhizhen, Lin Shisheng, He Haiping, Gu Xiuquan, Chen Lingxiang, Lü Jianguo, Huang Jingyun, Zhu Liping, Wang Lei, Zhang Yinzhu and Li Xianhang
Abstract: Using ZnO/Zn0.9Mg0.1O multi-quantum wells as active layer and Na as acceptor dopant of ZnO, we fabricate ZnO light-emitting diode (LED) on silicon substrate. We observe strong blue-violet emission and negligible defect emission from this device under low current injection at room temperature. This work could have significant impact on the practical application of ZnO LED.
Key words: LED, Na doped, p-type ZnO, multi-quantum wells
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Received: 18 August 2015 Revised: 21 July 2008 Online: Published: 01 August 2008
| Citation: |
Ye Zhizhen, Lin Shisheng, He Haiping, Gu Xiuquan, Chen Lingxiang, Lü Jianguo, Huang Jingyun, Zhu Liping, Wang Lei, Zhang Yinzhu, Li Xianhang. Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped p-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells[J]. Journal of Semiconductors, 2008, 29(8): 1433-1435.
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Ye Z Z, Lin S S, He H P, Gu X Q, Chen L X, Lü J, Huang J Y, Zhu L P, Wang L, Zhang Y Z, Li X H. Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped p-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells[J]. J. Semicond., 2008, 29(8): 1433.
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