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J. Semicond. > 2008, Volume 29?>?Issue 2?> 344-347

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Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer

Cheng Jianbing, Zhang Bo and Li Zhaoji

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Abstract: A new LDMOS with a full depletion floating buried layer is proposed.Because of the buried layer, a new electric field peak is induced and this new field modulates the field in the drift region.The modulation reduces the field of the drain side, and meanwhile, the fields of the source side and the middle of the drift are improved (the REBULF effect).The influence of the doping, thickness, and length of bury on the breakdown voltage is discussed.2D numerical simulations using MEDICI show that the breakdown voltage increases from 585.8 to 886.9V.

Key words: LDMOS,  full depletion floating buried layer,  RESURF,  REBULF,  breakdown voltage

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    Received: 18 August 2015 Revised: 18 September 2007 Online: Published: 01 February 2008

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      Cheng Jianbing, Zhang Bo, Li Zhaoji. Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer[J]. Journal of Semiconductors, 2008, 29(2): 344-347. ****Cheng J B, Zhang B, Li Z J. Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer[J]. J. Semicond., 2008, 29(2): 344.
      Citation:
      Cheng Jianbing, Zhang Bo, Li Zhaoji. Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer[J]. Journal of Semiconductors, 2008, 29(2): 344-347. ****
      Cheng J B, Zhang B, Li Z J. Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer[J]. J. Semicond., 2008, 29(2): 344.

      Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer

      • IC Design Center, University of Electronic Science and Technology of China, Chengdu 610054, China

      • IC Design Center, University of Electronic Science and Technology of China, Chengdu 610054, China

      • IC Design Center, University of Electronic Science and Technology of China, Chengdu 610054, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-30
      • Revised Date: 2007-09-18
      • Published Date: 2008-01-31

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