Abstract: A novel fully-depleted SOI device structure with a double-gate and dual-strained channel is presented.The electrical characteristics of this device with the effective gate length scaled down to 25nm are simulated.When the Ge content reaches 30%, by the adoption of a single-gate (SG) control mechanism, the drive currents are improved by 43% and 67%, respectively, for the strained-Si n-MOSFET and the strained-SiGe p-MOSFET over their unstrained counterparts.By adopting double-gate (DG) control mechanisms, the similar enhancements are 31% and 60%, respectively.The simulation results show that the DG MOSFETs exhibit a steeper subthreshold slop, a higher transconductance, and a stronger capacity to restrict short-channel-effects over SG MOSFETs.The new structure can be achieved with today’s semiconductor manufacturing level.

Key words: double-gate, dual-strained-channel, short channel effects