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J. Semicond. > 2008, Volume 29?>?Issue 2?> 324-328

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Resonant Tunneling Diode Based Stress Measurement

Xiong Jijun, Mao Haiyang, Zhang Wendong and Xue Chenyang

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Abstract: The output characteristics of InGaAs/AlAs resonant tunneling diodes (RTDs) changes as a function of external stress, and this meso-piezoresistive effect can be used to measure stress.In this paper, two RTD-based strategies to measure stress, resonance frequency measurement and RTD-Wheatstone bridge measurement, are discussed.The experimental results show that the piezoresistive sensitivity of the RTD-Wheatstone bridge can be configured within a range of 3 orders with different bias voltages, and the maximum piezoresistive sensitivity is 4.782e-9Pa-1.

Key words: current-voltage characteristic, oscillation frequency, piezoresistive sensitivity, resonant tunneling diode, stress measurement

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    Received: 18 August 2015 Revised: 16 October 2007 Online: Published: 01 February 2008

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      Xiong Jijun, Mao Haiyang, Zhang Wendong, Xue Chenyang. Resonant Tunneling Diode Based Stress Measurement[J]. Journal of Semiconductors, 2008, 29(2): 324-328. ****Xiong J J, Mao H Y, Zhang W D, Xue C Y. Resonant Tunneling Diode Based Stress Measurement[J]. J. Semicond., 2008, 29(2): 324.
      Citation:
      Xiong Jijun, Mao Haiyang, Zhang Wendong, Xue Chenyang. Resonant Tunneling Diode Based Stress Measurement[J]. Journal of Semiconductors, 2008, 29(2): 324-328. ****
      Xiong J J, Mao H Y, Zhang W D, Xue C Y. Resonant Tunneling Diode Based Stress Measurement[J]. J. Semicond., 2008, 29(2): 324.

      Resonant Tunneling Diode Based Stress Measurement

      • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China

      • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China

      • Institute of Microelectronics, Pe

      • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China

      • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-08
      • Revised Date: 2007-10-16
      • Published Date: 2008-01-31

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