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J. Semicond. > 2008, Volume 29?>?Issue 2?> 319-323

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Preparation and C2H2 Sensing Characteristics of Sm2O3-Doped SnO2 Gas Sensors

Fan Huitao, Zhang Tong, Qi Qi and Liu Li

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Abstract: Sm2O3-doped SnO2 nano powders are prepared with chemical deposition and characterized by X-ray diffraction and scanning electron microscopy.The studies reveal that the addition of Sm2O3 improves the C2H2 sensing properties of the SnO2 gas sensor.The best performance of the sensor is obtained at an operating temperature of 180℃.The sensor exhibits high sensitivity (64 to 1000 ppm vol.ratio C2H2) and rapid response and recovery (about 3 and 17s, respectively).The effect of humidity on the sensor’s response to C2H2 is also investigated.

Key words: SnO2, Sm2O3, C2H2, gas sensor, nano powder

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    Received: 18 August 2015 Revised: 19 September 2007 Online: Published: 01 February 2008

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      Fan Huitao, Zhang Tong, Qi Qi, Liu Li. Preparation and C2H2 Sensing Characteristics of Sm2O3-Doped SnO2 Gas Sensors[J]. Journal of Semiconductors, 2008, 29(2): 319-323. ****Fan H T, Zhang T, Qi Q, Liu L. Preparation and C2H2 Sensing Characteristics of Sm2O3-Doped SnO2 Gas Sensors[J]. J. Semicond., 2008, 29(2): 319.
      Citation:
      Fan Huitao, Zhang Tong, Qi Qi, Liu Li. Preparation and C2H2 Sensing Characteristics of Sm2O3-Doped SnO2 Gas Sensors[J]. Journal of Semiconductors, 2008, 29(2): 319-323. ****
      Fan H T, Zhang T, Qi Q, Liu L. Preparation and C2H2 Sensing Characteristics of Sm2O3-Doped SnO2 Gas Sensors[J]. J. Semicond., 2008, 29(2): 319.

      Preparation and C2H2 Sensing Characteristics of Sm2O3-Doped SnO2 Gas Sensors

      • State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

      • State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

      • State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

      • State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

      • College of Physics, Jilin University, Changchun 130012, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-01
      • Revised Date: 2007-09-19
      • Published Date: 2008-01-31

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