Chin. J. Semicond. > 2007, Volume 28?>?Issue 11?> 1765-1768

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Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

Sun Hao, Qi Ming, Xu Anhuai, Ai Likun and Zhu Fuying

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Abstract: Heavily carbon doped p-type GaAsSb epi-layers with lattice matched to InP substrate are grown by gas source molecular beam epitaxy (GSMBE) using carbon tetrabromide (CBr4) as the carbon source.The doping characteristics of carbon-doped GaAsSb with a hole concentration of (1～20)e19cm-3 are investigated.A maximal hole concentration of 2.025e20cm-3 is obtained with a corresponding mobility of 20.4cm2/(V·s).The effects of growth temperature on the epi-layer composition,crystalline quality,and surface roughness are also studied experimentally,and it is found that 480℃ is the optimal growth temperature at which high quality carbon-doped p-type GaAsSb epi-layers can be obtained.

Key words: heterojunction bipolar transistor, InP, GaAsSb, carbon doping, gas source molecular beam epitaxy

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    Received: 18 August 2015 Revised: 17 May 2007 Online: Published: 01 November 2007

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      Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Zhu Fuying. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(11): 1765-1768. ****Sun H, Qi M, Xu A H, Ai L K, Zhu F Y. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(11): 1765.
      Citation:
      Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Zhu Fuying. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(11): 1765-1768. ****
      Sun H, Qi M, Xu A H, Ai L K, Zhu F Y. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(11): 1765.

      Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-04-20
      • Revised Date: 2007-05-17
      • Published Date: 2007-10-24

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