Chin. J. Semicond. > 2007, Volume 28?>?Issue 2?> 254-257

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Self-Seeding of DFB Laser to Improve the Frequency Response

Wang Xin, Wen Jimin, Huang Hengpei, Yuan Haiqing, 謝亮 and Xie Liang

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Abstract: A simple and effective self-seeding method of DFB lasers is presented.The frequency responses of a directly modulated DFB laser become very flat with this self-seeding method.Experiment was done using a three-port optical circulator and a 1×2 optical coupler.The results show that the peak of relaxation oscillation of the frequency response curves can be restrained significantly by changing the polarization of the self-seeding light.

Key words: distributed feedback laser, direct intensity modulation, frequency response, self-seeding, relaxation oscillation

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    Received: 18 August 2015 Revised: 30 October 2006 Online: Published: 01 February 2007

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      Wang Xin, Wen Jimin, Huang Hengpei, Yuan Haiqing, 謝亮, Xie Liang. Self-Seeding of DFB Laser to Improve the Frequency Response[J]. Journal of Semiconductors, 2007, 28(2): 254-257. ****Wang X, Wen J M, Huang H P, Yuan H Q, Xie L. Self-Seeding of DFB Laser to Improve the Frequency Response[J]. Chin. J. Semicond., 2007, 28(2): 254.
      Citation:
      Wang Xin, Wen Jimin, Huang Hengpei, Yuan Haiqing, 謝亮, Xie Liang. Self-Seeding of DFB Laser to Improve the Frequency Response[J]. Journal of Semiconductors, 2007, 28(2): 254-257. ****
      Wang X, Wen J M, Huang H P, Yuan H Q, Xie L. Self-Seeding of DFB Laser to Improve the Frequency Response[J]. Chin. J. Semicond., 2007, 28(2): 254.

      Self-Seeding of DFB Laser to Improve the Frequency Response

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-09-28
      • Revised Date: 2006-10-30
      • Published Date: 2007-01-30

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