Chin. J. Semicond. > 2007, Volume 28?>?Issue 2?> 258-264

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Injection Locked Erbium-Doped Fiber Ring Laser and Its Wavelength Tuning

Zhang Xin, Zhang Tao, Chen Wei, Liu Yu, Wang Xin, Xie Liang, Zhu Ninghua and Feng Boxue

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Abstract: The injection locking of an erbium-doped fiber ring laser (EDFRL) is studied,and a novel method to stabilize the wavelength and output power of tunable single-longitudinal-mode EDFRL with compound cavity structure is proposed and experimentally demonstrated.One of the longitudinal modes is stimulated by an injected continuous wave so that the mode is able to stabilize the system.An output power of ＞0.6dBm and an SNR of ＞43dB within the tuning range from 1527.4 to 1561.9nm can be achieved for this laser.A wavelength variation of less than 0.01nm,power fluctuation of less than 0.02dB,and linewidth of about 1.4kHz are also obtained.

Key words: EDFRL, injection locking, single longitudinal mode, tunability, stabilization of wavelength and power, linewidth

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    Received: 18 August 2015 Revised: 24 October 2006 Online: Published: 01 February 2007

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      Zhang Xin, Zhang Tao, Chen Wei, Liu Yu, Wang Xin, Xie Liang, Zhu Ninghua, Feng Boxue. Injection Locked Erbium-Doped Fiber Ring Laser and Its Wavelength Tuning[J]. Journal of Semiconductors, 2007, 28(2): 258-264. ****Zhang X, Zhang T, Chen W, Liu Y, Wang X, Xie L, Zhu N H, Feng B X. Injection Locked Erbium-Doped Fiber Ring Laser and Its Wavelength Tuning[J]. Chin. J. Semicond., 2007, 28(2): 258.
      Citation:
      Zhang Xin, Zhang Tao, Chen Wei, Liu Yu, Wang Xin, Xie Liang, Zhu Ninghua, Feng Boxue. Injection Locked Erbium-Doped Fiber Ring Laser and Its Wavelength Tuning[J]. Journal of Semiconductors, 2007, 28(2): 258-264. ****
      Zhang X, Zhang T, Chen W, Liu Y, Wang X, Xie L, Zhu N H, Feng B X. Injection Locked Erbium-Doped Fiber Ring Laser and Its Wavelength Tuning[J]. Chin. J. Semicond., 2007, 28(2): 258.

      Injection Locked Erbium-Doped Fiber Ring Laser and Its Wavelength Tuning

      • School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-09-13
      • Revised Date: 2006-10-24
      • Published Date: 2007-01-30

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