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J. Semicond. > 2008, Volume 29?>?Issue 10?> 2009-2013

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Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source

Liu Zhaojun, Meng Zhiguo, Zhao Sunyun, Wong Man, Kwok H S, Wu Chunya and Xiong Shaozhen

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Abstract: Nickel-silicon alloy target is used as a source of sputtering;a new type of nickel source,called a self-released nickel source,is fabricated.Self-released nickel source can control the crystallization rate efficiently and the obtained poly-Si material has a low level of nickel residue and high quality.p-type thin film transistors are fabricated using this kind of poly-Si as active islands.They have good performance and lower leakage current.

Key words: metal induced lateral crystallization, poly-silicon thin film, low temperature preparation, annealing treatment

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    Received: 18 August 2015 Revised: 29 May 2008 Online: Published: 01 October 2008

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      Liu Zhaojun, Meng Zhiguo, Zhao Sunyun, Wong Man, Kwok H S, Wu Chunya, Xiong Shaozhen. Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source[J]. Journal of Semiconductors, 2008, 29(10): 2009-2013. ****Liu Z J, Meng Z G, Zhao S Y, Wo N M, Kwok H S, Wu C Y, Xiong S Z. Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source[J]. J. Semicond., 2008, 29(10): 2009.
      Citation:
      Liu Zhaojun, Meng Zhiguo, Zhao Sunyun, Wong Man, Kwok H S, Wu Chunya, Xiong Shaozhen. Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source[J]. Journal of Semiconductors, 2008, 29(10): 2009-2013. ****
      Liu Z J, Meng Z G, Zhao S Y, Wo N M, Kwok H S, Wu C Y, Xiong S Z. Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source[J]. J. Semicond., 2008, 29(10): 2009.

      Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source

      • Institute of Photo-Electronics,Nankai University,Tianjin 300071,China

      • Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China

      • Institute of Photo-Electronics,Nankai University,Tianjin 300071,China

      • Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China

      • Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China

      • Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China

      • Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China

      • Institute of Photo-Electronics,Nankai University,Tianjin 300071,China

      • Institute of Photo-Electronics,Nankai University,Tianjin 300071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-10
      • Revised Date: 2008-05-29
      • Published Date: 2008-11-11

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