Abstract: By introducing layer-by-layer (LBL) growth technology and hydrogen plasma treatment on the stacking layers in a hot-wire-assisted microwave electron-cyclotron-resonance chemical vapor deposition (HW-MWECR CVD) system,we fabricate a series of microcrystalline silicon (μc-Si∶H) films with different thicknesses.It is found that when the thickness of the films is less than 0.55μm,they have the typical characteristics of a-Si∶H films,whose photoconductivity degrades rapidly.But when the film thickness is in the range of 0.60～0.70μm,they have characteristics of both amorphous and microcrystalline silicon films,in which the photoconductivity is very sensitive to changes in thickness,but the decay ratio of the photoconductivity is relatively stable.When the thickness of the films is greater than 0.80μm,they have microcrystalline silicon properties.Moreover,the photoconductivity does not change after simulating illumination for 53.5h.

Key words: LBL growth technology, microcrystalline silicon film, photoconductivity degradation, illumination simulation