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J. Semicond. > 2008, Volume 29?>?Issue 3?> 554-558

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DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate

Wei Ke, Liu Xinyu, He Zhijing and Wu Dexin

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Abstract: This paper reports two kinds of AlGaN/GaN HEMTs with the field plate gate.In contrast with a conventional HEMT structure,their DC characteristics are improved and the broken voltage is over 100V.The reverse leakage current of the Schottky gate is reduced from 0.037 to 0.0057mA with a 100V voltage between gate and drain using a field plate.Its broken voltage is increased from 78 to over 100V.The HEMTs with the gate field plate structure and the source field plate structure are compared and their high frequency characteristics are also discussed.

Key words: AlGaN/GaN, HEMT, broken voltage, Schottky characteristics, field plate structure

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    Received: 18 August 2015 Revised: 12 November 2007 Online: Published: 01 March 2008

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      Wei Ke, Liu Xinyu, He Zhijing, Wu Dexin. DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate[J]. Journal of Semiconductors, 2008, 29(3): 554-558. ****Wei K, Liu X Y, He Z J, Wu D X. DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate[J]. J. Semicond., 2008, 29(3): 554.
      Citation:
      Wei Ke, Liu Xinyu, He Zhijing, Wu Dexin. DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate[J]. Journal of Semiconductors, 2008, 29(3): 554-558. ****
      Wei K, Liu X Y, He Z J, Wu D X. DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate[J]. J. Semicond., 2008, 29(3): 554.

      DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-15
      • Revised Date: 2007-11-12
      • Published Date: 2008-02-28

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