Abstract: The preparation of Boron-doped solution-based metal induced crystallized poly-Si is introduced and its electrical and optical characteristics are studied.P+-MIC poly-Si thin film has good electrical characteristics and optical characteristics including high reflection and transmission and very low absorption within red light region.As a result,we used it as an OLED electrode.The maximum luminance efficiency of the device with the poly-Si anode is 5.88cd/A,57% higher than that of the OLED with the ITO anode.Systemization of the relatively high reflectivity P+-poly-Si anode with the very high reflectivity Al cathode forms a micro-cavity structure with a certain Q to improve the efficiency of OLED fabricated on it.So,a homochromy display device with high EL intensity and high saturation performance can be realized.The significance of this study and design rests with:Using P+-poly-Si,which is the same material as the active layer and source and drain electrodes of the coplanar drive TFT,as the anode of MOLED in place of ITO,which not only develops high performance MOLED,but also greatly simplifies the preparation process flow.Consequently,a simple 4-mask AMOLED panel preparation process is formed.

Key words: metal induced crystallization poly-crystalline Si film, organic light emitting display, microcavity, simple flow