J. Semicond. > 2008, Volume 29?>?Issue 1?> 149-152

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A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation

Liu Jie, Zhou Jicheng, Luo Hongwei, Kong Xuedong, En Yunfei, Shi Qian, He Yujuan and Lin Li

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Abstract: Total dose irradiation effects of partially depleted SOI MOSFETs are studied under 10keV X-ray exposure.Results show that the front-gate characteristics do not change significantly during irradiation.An anomalous kink is observed in the back-gate logarithmic curve of both nMOS and pMOS,which is attributed to charged traps at the buried oxide/top silicon (BOX/SOI) interface during irradiation.Two-dimensional numerical simulation using MEDICI supports this conclusion.

Key words: X-ray, SOI MOSFETs, partially depleted, kink effect, total-dose irradiation

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    Received: 18 August 2015 Revised: 13 August 2007 Online: Published: 01 January 2008

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      Liu Jie, Zhou Jicheng, Luo Hongwei, Kong Xuedong, En Yunfei, Shi Qian, He Yujuan, Lin Li. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. Journal of Semiconductors, 2008, 29(1): 149-152. ****Liu J, Zhou J C, Luo H W, Kong X D, En Y F, Shi Q, He Y J, Lin L. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. J. Semicond., 2008, 29(1): 149.
      Citation:
      Liu Jie, Zhou Jicheng, Luo Hongwei, Kong Xuedong, En Yunfei, Shi Qian, He Yujuan, Lin Li. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. Journal of Semiconductors, 2008, 29(1): 149-152. ****
      Liu J, Zhou J C, Luo H W, Kong X D, En Y F, Shi Q, He Y J, Lin L. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. J. Semicond., 2008, 29(1): 149.

      A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation

      • Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China

      • National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

      • Department of Material Science and Te

      • Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China

      • Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

      • Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

      • Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

      • Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

      • Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

      • Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-17
      • Revised Date: 2007-08-13
      • Published Date: 2007-12-26

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