Abstract: An improved temperature-dependent 4H-SiC MOSFET channel-electron mobility model for circuit simulation is established.Some factors are introduced,including the effects of temperature on transverse effective electric field and surface roughness scattering,the dependence of the saturation drift velocity of the electron on transverse effective electric field and temperature,and an improved interface trapped charge and fixed oxide charge coulomb scattering model.In addition,the interface state parameters and fixed oxide charge density are extracted by simulation with the experimental temperature-threshold voltage curve.The simulated output characteristic curves with this model agree with experimental results.

Key words: 4H-SiC, n-MOSFET, threshold voltage, interface state parameters, temperature-dependent mobility