Chin. J. Semicond. > 2007, Volume 28?>?Issue 8?> 1248-1251

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Effects of Different Collector Current Biases on γ Radiation Response of npn-BJT

Cheng Xinghua, Wang Jian'an, Gong Min, Shi Ruiying, Pu Lin, Liu Luncai, Guo Feng and Yang Chen

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Abstract: The total dose effect of γ irradiation at different biased collector currents on Si npn-BJTs was investigated.The experimental results show that the irradiation-induced degradation of an npn-BJT increases with the total dose;however,it decreases with the increase of the collector current at the same total dose.This phenomenon cannot be well explained by the recent space charge model.In this paper,a revised model is presented,in which there are electrically neutral dipoles near the Si-SiO2 interface of the extrinsic base region.By using the new model,all the experimental results have been well interpreted.

Key words: collector current bias, total dose effect, electrically neutral dipoles, space charge model

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    Received: 18 August 2015 Revised: 11 April 2007 Online: Published: 01 August 2007

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      Cheng Xinghua, Wang Jian'an, Gong Min, Shi Ruiying, Pu Lin, Liu Luncai, Guo Feng, Yang Chen. Effects of Different Collector Current Biases on γ Radiation Response of npn-BJT[J]. Journal of Semiconductors, 2007, 28(8): 1248-1251. ****Cheng X H, Wang J, Gong M, Shi R Y, Pu L, Liu L C, Guo F, Yang C. Effects of Different Collector Current Biases on γ Radiation Response of npn-BJT[J]. Chin. J. Semicond., 2007, 28(8): 1248.
      Citation:
      Cheng Xinghua, Wang Jian'an, Gong Min, Shi Ruiying, Pu Lin, Liu Luncai, Guo Feng, Yang Chen. Effects of Different Collector Current Biases on γ Radiation Response of npn-BJT[J]. Journal of Semiconductors, 2007, 28(8): 1248-1251. ****
      Cheng X H, Wang J, Gong M, Shi R Y, Pu L, Liu L C, Guo F, Yang C. Effects of Different Collector Current Biases on γ Radiation Response of npn-BJT[J]. Chin. J. Semicond., 2007, 28(8): 1248.

      Effects of Different Collector Current Biases on γ Radiation Response of npn-BJT

      • Department of Microelectronics,Sichuan University,Chengdu 610064,China

      • National Laboratory of Analog Integrated Circuits,Chongqing 400060,China

      • Department of Microelectronics,Sichuan University,Chengdu 610064,China

      • Key Laboratory of Microelectronic Technology of Sichuan Province,Chengdu 610064,China

      • Department of Microelectronics,Sichuan University,Chengdu 610064,China

      • Key Laboratory of Microelectronic Technology of Sichuan Province,Chengdu 610064,China

      • National Laboratory of Analog Integrated Circuits,Chongqing 400060,China

      • National Laboratory of Analog Integrated Circuits,Chongqing 400060,China

      • Department of Microelectronics,Sichuan University,Chengdu 610064,China

      • Department of Microelectronics,Sichuan University,Chengdu 610064,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-12-30
      • Revised Date: 2007-04-11
      • Published Date: 2007-08-08

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