Chin. J. Semicond. > 2007, Volume 28?>?Issue 11?> 1761-1764

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Optical Properties of InN Films Grown by MOCVD

Kong Jieying, Zhang Rong, Liu Bin, Xie Zili, Zhang Yong, Xiu Xiangqian and Zheng Youdou

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Abstract: By means of optical absorption,photoluminescence (PL),and ellipsometric spectra,metal organic chemical vapor deposition (MOCVD) grown InN films are investigated.Through absorption and PL measurements,it is proven that the band gap of the high quality InN is 0.68eV,which agrees with the recently reported value of ～0.7eV.By analysis of the Raman scattering spectrum,the comparatively low background concentration of electrons results in a smaller band gap value.The transition energy E0 of wurtzite InN at critical point Г0 is determined by ellipsometric spectra.In addition,the complex refractive index n+ik of InN in the energy range from 0.65 to 4.0eV is obtained for the first time.

Key words: InN, optical absorption, PL, ellipsometry

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    Received: 18 August 2015 Revised: 24 May 2007 Online: Published: 01 November 2007

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      Kong Jieying, Zhang Rong, Liu Bin, Xie Zili, Zhang Yong, Xiu Xiangqian, Zheng Youdou. Optical Properties of InN Films Grown by MOCVD[J]. Journal of Semiconductors, 2007, 28(11): 1761-1764. ****Kong J Y, Zhang R, Liu B, Xie Z L, Zhang Y, Xiu X Q, Zheng Y D. Optical Properties of InN Films Grown by MOCVD[J]. Chin. J. Semicond., 2007, 28(11): 1761.
      Citation:
      Kong Jieying, Zhang Rong, Liu Bin, Xie Zili, Zhang Yong, Xiu Xiangqian, Zheng Youdou. Optical Properties of InN Films Grown by MOCVD[J]. Journal of Semiconductors, 2007, 28(11): 1761-1764. ****
      Kong J Y, Zhang R, Liu B, Xie Z L, Zhang Y, Xiu X Q, Zheng Y D. Optical Properties of InN Films Grown by MOCVD[J]. Chin. J. Semicond., 2007, 28(11): 1761.

      Optical Properties of InN Films Grown by MOCVD

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • National Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-04-22
      • Revised Date: 2007-05-24
      • Published Date: 2007-10-24

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