Abstract: High-quality c-axis oriented ZnO thin films are grown on Si(111) substrates at different substrate temperatures by pulsed laser deposition.Synchrotron radiation X-ray grazing incident diffraction (GID) is employed to study the interface structure of ZnO /Si(111).GID results indicate that there is a compressive stress in all ZnO epitaxial films grown at substrate temperatures of 500 or 300℃ by PLD.With the increase of X-ray detection depth,the compressive stress increases.Combined with conventional XRD technology,the biaxial stress,Possion’s ratio,and c/a of the ZnO films are calculated.The two samples have a six-sided closed packing structure,deviating from the value of the standard ZnO.This indicates that the sample grown at 500℃ has better crystal quality.

Key words: zinc oxides, pulsed laser deposition, grazing incident diffraction, synchrotron radiation