Abstract: D0h luminescence of ZnO films deposited on p-type Si substrates grown by MOCVD is reported.After annealing in air at 700℃ for 1h,the photoluminescence (PL) spectra,the I-V characteristics,and the deep level transient spectroscopy (DLTS) of the samples are measured.All the samples we measured have the rectification characteristic.The DLTS signals show two deep levels of E1 and E2.The Gauss fit curves of the PL spectra at room temperature show three luminescence lines,one of which is attributed to the excitation emission.The donor level E1 measured by DLTS and the other two emission lines,which are very close to each other,have a close relation with the location state donor ionization energy Ed,and are thought to be from neutral donors bound to hole emission (D0h).Moreover,the intensity of the PL spectra decreases while the relative density of E2 increases,showing that E2 has the properties of a nonradiative center.

Key words: MOCVD, ZnO/p-Si, heterojunction, defect