Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 47-51

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Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing

Zhou Jingtao, Zhu Hongliang, Cheng Yuanbing, Wang Baojun and Wang Wei

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Abstract: Low energy helium ion implantation into InP heterostructures that induces controlled quantum well intermixing is reported and used for the first time.A significant blue-shift enhanced by a moderate RTA process is achieved.An intermixed FP laser is fabricated.Compared to the unimplanted laser,the lasing wavelength of the intermixed laser blue-shifts by 37nm.

Key words: helium ion implantation, low energy, quantum well intermixing, blue-shift, FP laser

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    Received: 18 August 2015 Revised: 11 August 2006 Online: Published: 01 January 2007

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      Zhou Jingtao, Zhu Hongliang, Cheng Yuanbing, Wang Baojun, Wang Wei. Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing[J]. Journal of Semiconductors, 2007, 28(1): 47-51. ****Zhou J T, Zhu H L, Cheng Y B, Wang B J, Wang W. Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing[J]. Chin. J. Semicond., 2007, 28(1): 47.
      Citation:
      Zhou Jingtao, Zhu Hongliang, Cheng Yuanbing, Wang Baojun, Wang Wei. Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing[J]. Journal of Semiconductors, 2007, 28(1): 47-51. ****
      Zhou J T, Zhu H L, Cheng Y B, Wang B J, Wang W. Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing[J]. Chin. J. Semicond., 2007, 28(1): 47.

      Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-03
      • Revised Date: 2006-08-11
      • Published Date: 2006-12-26

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