Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 52-55

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Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer

Fu Liming, Yang Deren, Ma Xiangyang, Guo Yang and Que Duanlin

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Abstract: The effects of high temperature treatment by conventional furnace annealing and rapid thermal processing (RTP) on the dissolution and the re-growth behavior of oxygen precipitation in Czochralski (CZ) silicon wafers are investigated.It is found that RTP is a rapid and effective way to dissolve oxygen precipitation in comparison with conventional furnace annealing.After dissolution treatment by RTP,the density of bulk micro-defects (BMDs) increases remarkably during the subsequent anneal for the re-growth of oxygen precipitation,while after dissolution treatment by conventional furnace annealing,the density of BMDs is nearly unchanged during the subsequent annealing for the re-growth of oxygen precipitation.The higher the subsequent annealing temperature,the faster the re-growth of oxygen precipitation in silicon wafers subjected to the dissolution treatment.

Key words: Czochralski silicon, oxygen precipitation, dissolution, re-growth

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    Received: 18 August 2015 Revised: 23 August 2006 Online: Published: 01 January 2007

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      Fu Liming, Yang Deren, Ma Xiangyang, Guo Yang, Que Duanlin. Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer[J]. Journal of Semiconductors, 2007, 28(1): 52-55. ****Fu L M, Yang D R, Ma X Y, Guo Y, Que D L. Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer[J]. Chin. J. Semicond., 2007, 28(1): 52.
      Citation:
      Fu Liming, Yang Deren, Ma Xiangyang, Guo Yang, Que Duanlin. Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer[J]. Journal of Semiconductors, 2007, 28(1): 52-55. ****
      Fu L M, Yang D R, Ma X Y, Guo Y, Que D L. Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer[J]. Chin. J. Semicond., 2007, 28(1): 52.

      Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-22
      • Revised Date: 2006-08-23
      • Published Date: 2006-12-26

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