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Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition

Tu Deyu, Ji Zhuoyu, Shang Liwei, Liu Ming, Wang Congshun and Hu Wenping

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Abstract: The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) thin-film layer was sandwiched in a Ti/AgTCNQ/Au crossbar structure array as organic bistable devices (OBD).A reversible and reproducible memory switching property,caused by intermolecular charge transfer (CT) in the AgTCNQ thin-film,was observed in the organic bistable devices.The positive threshold voltage from the high impedance state to the low impedance was about 3.8~5V,with the reverse phenomenon occurring at a negative voltage of -3.5~-4.4V,lower than that with a CuTCNQ active layer.The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.

Key words: organic electronics, bistable switching, crossbar memory

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    Received: 18 August 2015 Revised: 27 August 2007 Online: Published: 01 January 2008

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      Tu Deyu, Ji Zhuoyu, Shang Liwei, Liu Ming, Wang Congshun, Hu Wenping. Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition[J]. Journal of Semiconductors, 2008, 29(1): 50-54. ****Tu D Y, Ji Z Y, Shang L W, Liu M, Wang C S, Hu W P. Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition[J]. J. Semicond., 2008, 29(1): 50.
      Citation:
      Tu Deyu, Ji Zhuoyu, Shang Liwei, Liu Ming, Wang Congshun, Hu Wenping. Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition[J]. Journal of Semiconductors, 2008, 29(1): 50-54. ****
      Tu D Y, Ji Z Y, Shang L W, Liu M, Wang C S, Hu W P. Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition[J]. J. Semicond., 2008, 29(1): 50.

      Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Beijing National Laboratory of Molecular Sciences,Key Laboratory of Organic Solids,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100080,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Beijing National Laboratory of Molecular Sciences,Key Laboratory of Organic Solids,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100080,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-17
      • Revised Date: 2007-08-27
      • Published Date: 2007-12-26

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