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A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs

Tang Junxiong, Tang Minghua, Yang Feng, Zhang Junjie, Zhou Yichun and Zheng Xuejun

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Abstract: A temperature-dependent model for threshold voltage and potential distribution of fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors is developed.The two-dimensional potential distribution function in the silicon thin film based on an approximate parabolic function has been applied to solve the two-dimensional Poisson’s equation with suitable boundary conditions.The minimum of the surface potential is used to deduce the threshold voltage model.The model reveals the variations of potential distribution and threshold voltage with temperature,taking into account short-channel effects.Furthermore,the model is verified by the SILVACO ATLAS simulation.The calculations and the simulation agree well.

Key words: fully depleted silicon-on-insulator MOSFETs, potential, threshold voltage

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    Received: 18 August 2015 Revised: 21 May 2007 Online: Published: 01 January 2008

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      Tang Junxiong, Tang Minghua, Yang Feng, Zhang Junjie, Zhou Yichun, Zheng Xuejun. A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs[J]. Journal of Semiconductors, 2008, 29(1): 45-49. ****Tang J X, Tang M H, Yang F, Zhang J J, Zhou Y C, Zheng X J. A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs[J]. J. Semicond., 2008, 29(1): 45.
      Citation:
      Tang Junxiong, Tang Minghua, Yang Feng, Zhang Junjie, Zhou Yichun, Zheng Xuejun. A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs[J]. Journal of Semiconductors, 2008, 29(1): 45-49. ****
      Tang J X, Tang M H, Yang F, Zhang J J, Zhou Y C, Zheng X J. A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs[J]. J. Semicond., 2008, 29(1): 45.

      A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs

      • Key Laboratory of Low Dimensional Materials & Application Technology of the Ministry of Education,Faculty of Material & Optoelectronic Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology of the Ministry of Education,Faculty of Material & Optoelectronic Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology of the Ministry of Education,Faculty of Material & Optoelectronic Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology of the Ministry of Education,Faculty of Material & Optoelectronic Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology of the Ministry of Education,Faculty of Material & Optoelectronic Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology of the Ministry of Education,Faculty of Material & Optoelectronic Physics,Xiangtan University,Xiangtan 411105,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-05-21
      • Revised Date: 2007-05-21
      • Published Date: 2007-12-26

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