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J. Semicond. > 2021, Volume 42?>?Issue 1?> 010101

EDITORIAL

Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Yue Hao1, , Huaqiang Wu2, , Yuchao Yang3, , Qi Liu4, , Xiao Gong5, , Genquan Han1, and Ming Li6,

+ Author Affiliations

 Corresponding author: Yue Hao, yhao@xidian.edu.cn; Huaqiang Wu, Email: wuhq@tsinghua.edu.cn; Yuchao Yang, yuchaoyang@pku.edu.cn; Qi Liu, qi_liu@fudan.edu.cn; Xiao Gong, elegong@nus.edu.sg; Genquan Han, gqhan@xidian.edu.cn; Ming Li, ml@semi.ac.cn

DOI: 10.1088/1674-4926/42/1/010101

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[1]
Sokolov A S, Abbas H, Abbas Y, et al. Towards engineering in memristors for emerging memory and neuromorphic computing: A review. J Semicond, 2021, 42(1), 013101 doi: 10.1088/1674-4926/42/1/013101
[2]
Yang X, Luo C, Tian X Y, et al. A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory. J Semicond, 2021, 42(1), 013102 doi: 10.1088/1674-4926/42/1/013102
[3]
Huang H Y, Ge C, Liu Z H, et al. Electrolyte-gated transistors for neuromorphic applications. J Semicond, 2021, 42(1), 013103 doi: 10.1088/1674-4926/42/1/013103
[4]
Chen J, Li J C, Li Y, et al. Multiply accumulate operations in memristor crossbar arrays for analog computing. J Semicond, 2021, 42(1), 013104 doi: 10.1088/1674-4926/42/1/013104
[5]
Liao F Y, Zhou F C, Chai Y, et al. Neuromorphic vision sensors: Principle, progress and perspectives. J Semicond, 2021, 42(1), 013105 doi: 10.1088/1674-4926/42/1/013105
[6]
Gong C R, Chen L, Liu W H, et al. Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors. J Semicond, 2021, 42(1), 014101 doi: 10.1088/1674-4926/42/1/014101
[7]
Shi J J, Lin Y, Zeng T, et al. Voltage-dependent plasticity and image Boolean operations realized in a WO x-based memristive synapse. J Semicond, 2021, 42(1), 014102 doi: 10.1088/1674-4926/42/1/014102
[8]
Tao Y, Li X H, Wang Z Q, et al. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices. J Semicond, 2021, 42(1), 014103 doi: 10.1088/1674-4926/42/1/014103
[1]
Sokolov A S, Abbas H, Abbas Y, et al. Towards engineering in memristors for emerging memory and neuromorphic computing: A review. J Semicond, 2021, 42(1), 013101 doi: 10.1088/1674-4926/42/1/013101
[2]
Yang X, Luo C, Tian X Y, et al. A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory. J Semicond, 2021, 42(1), 013102 doi: 10.1088/1674-4926/42/1/013102
[3]
Huang H Y, Ge C, Liu Z H, et al. Electrolyte-gated transistors for neuromorphic applications. J Semicond, 2021, 42(1), 013103 doi: 10.1088/1674-4926/42/1/013103
[4]
Chen J, Li J C, Li Y, et al. Multiply accumulate operations in memristor crossbar arrays for analog computing. J Semicond, 2021, 42(1), 013104 doi: 10.1088/1674-4926/42/1/013104
[5]
Liao F Y, Zhou F C, Chai Y, et al. Neuromorphic vision sensors: Principle, progress and perspectives. J Semicond, 2021, 42(1), 013105 doi: 10.1088/1674-4926/42/1/013105
[6]
Gong C R, Chen L, Liu W H, et al. Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors. J Semicond, 2021, 42(1), 014101 doi: 10.1088/1674-4926/42/1/014101
[7]
Shi J J, Lin Y, Zeng T, et al. Voltage-dependent plasticity and image Boolean operations realized in a WO x-based memristive synapse. J Semicond, 2021, 42(1), 014102 doi: 10.1088/1674-4926/42/1/014102
[8]
Tao Y, Li X H, Wang Z Q, et al. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices. J Semicond, 2021, 42(1), 014103 doi: 10.1088/1674-4926/42/1/014103

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    Received: 25 December 2020 Revised: Online: Accepted Manuscript: 26 December 2020Uncorrected proof: 28 December 2020Published: 09 January 2021

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      Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li. Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing[J]. Journal of Semiconductors, 2021, 42(1): 010101. doi: 10.1088/1674-4926/42/1/010101 ****Y Hao, H Q Wu, Y C Yang, Q Liu, X Gong, G Q Han, M Li, Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing[J]. J. Semicond., 2021, 42(1): 010101. doi: 10.1088/1674-4926/42/1/010101.
      Citation:
      Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li. Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing[J]. Journal of Semiconductors, 2021, 42(1): 010101. doi: 10.1088/1674-4926/42/1/010101 ****
      Y Hao, H Q Wu, Y C Yang, Q Liu, X Gong, G Q Han, M Li, Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing[J]. J. Semicond., 2021, 42(1): 010101. doi: 10.1088/1674-4926/42/1/010101.

      Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

      DOI: 10.1088/1674-4926/42/1/010101
      • 1.

        School of Microelectronics, Xidian University, Xi’an 710071, China

      • 2.

        Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • 3.

        Department of Micro/nanoelectronics, Peking University, Beijing 100871, China

      • 4.

        Frontier Institute of Chip and System, Fudan University, Shanghai 200438, China

      • 5.

        Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117546, Singapore

      • 6.

        Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      More Information
      • Yue Hao：is currently a Professor of Microelectronics and Solid State Electronics with Xidian University, Xi’an, China. His current interests include wide and untra-wide bandgap materials and devices, advanced CMOS devices and technology, semiconductor device reliability physics and failure mechanism, and organic electronics. Prof. Hao is a senior member of IEEE and member of the Chinese Academy of Sciences
      • Huaqiang Wu：is presently the director of the department of microelectronics and nanoelectronics, and the director of the Institute of Microelectronics, Tsinghua University. Dr. Wu is also served as the deputy director of Beijing Innovation Center for Future Chips. Dr. Wu received his Ph.D. degree in electrical and computer engineering from Cornell University, Ithaca, NY, in 2005. Prior to that, he was a senior engineer in Spansion LLC, Sunnyvale, CA. He joined Tsinghua University in 2009. His research interests include emerging memory and neuromorphic computing technologies. Dr. Wu has published more than 100 technical papers and owns more than 90 US and China patents. Dr. Wu’s papers have appeared on Nature, Nature Nanotechnology, Proceedings of the IEEE, IEEE EDL, ISSCC, IEDM, VLSI, etc
      • Yuchao Yang：received his PhD from Tsinghua University. He is now an Assistant Professor in Department of Micro/nanoelectronics and serves as Director of Center for Brain Inspired Chips at Peking University. His research interests include memristors, neuromorphic computing, and in-memory computing
      • Qi Liu：got his PhD degrees in microelectronics and solid-state electronics from the Anhui University in 2010. Now, he is a professor of Fudan University. Currently, his research interests focus on the fabrication, characterization and mechanism of the emerging memristor devices for nonvolatile memory, logic circuit and neuromorphic computing applications
      • Xiao Gong：is currently an Assistant Professor in the ECE Department of the National University of Singapore (NUS). He obtained his Ph. D Degree from NUS. He was also a Visiting Scientist at MIT in the year of 2014. His research interest includes advanced transistors for extremely low power logic and high frequency RF applications, emerging memories, circuits, and architectures for in-memory computing, single-photon avalanche diode for quantum technology, as well as 3D integration of hybrid devices for 5G/6G and opto-electronic integrated circuits
      • Genquan Han：received the B. Eng degree from Tsinghua University, Beijing, in 2003, and the Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, in 2008. He was a research fellow in National University of Singapore, from 2008 to 2013. In 2013, he joined College of Optoelectronic Engineering, Chongqing University. He is currently a Professor with the School of Microelectronics, Xidian University. His current research interests include high-mobility non-silicon MOSFETs, steep-slope field-effect transistors, novel non-volatile field-effect transistors, and Ga2O3 power devices. He is currently serving as an Editor for IEEE Electron Device Letters
      • Ming Li：Professor of the Institute of Semiconductors (IoS), CAS. He graduated from Shizuoka University in 2009. From 2009 to 2013, he engaged in postdoctoral research in the University of Ottawa and the INRS-EMT in Canada, and joined the IoS-CAS in 2013. He has been supported by the National Overseas High-level Youth Talent Program and the Excellent/Distinguished Young Scientist Foundation of NSFC. His research interests are mainly focused on optoelectronics and microwave photonics
      • Corresponding author: yhao@xidian.edu.cn; Email: wuhq@tsinghua.edu.cn; yuchaoyang@pku.edu.cn; qi_liu@fudan.edu.cn; elegong@nus.edu.sg; gqhan@xidian.edu.cn; ml@semi.ac.cn
      • Received Date: 2020-12-25
      • Published Date: 2021-01-10

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