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J. Semicond. > 2019, Volume 40?>?Issue 6?> 060402

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Room-temperature stable two-dimensional ferroelectric materials

Lun Dai

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 Corresponding author: Lun Dai, lundai@pku.edu.cn

DOI: 10.1088/1674-4926/40/6/060402

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[1]
Birol T. Stable and switchable polarization in 2D. Nature, 2018, 560, 174 doi: 10.1038/d41586-018-05807-5
[2]
Hoffmann M, Fengler F P G, Herzig M, et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, 2019, 565, 464 doi: 10.1038/s41586-018-0854-z
[3]
Ding W, Zhu J, Wang Z, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat Commun, 2017, 8, 14596 doi: 10.1038/ncomms14596
[4]
Xiao J, Zhu H, Wang Y, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 2018, 120, 227601 doi: 10.1103/PhysRevLett.120.227601
[5]
Zhou Y, Wu D, Zhu Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett, 2017, 17, 5508 doi: 10.1021/acs.nanolett.7b02198
[6]
Wan S, Li Y, Li W, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale, 2018, 10, 14885 doi: 10.1039/C8NR04422H
[7]
Khan A I, Chatterjee K, Wang N, et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 2015, 14, 182 doi: 10.1038/nmat4148
[8]
Si M, Su C, Jiang C, et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat Nano, 2018, 13, 24 doi: 10.1038/s41565-017-0010-1
Fig. 1.  (Color online) Double-well landscape of the free energy F in a ferroelectric as a function of the electric polarization P. Insets: the two energetically degenerate state with opposite electric polarizations of α-In2Se3. The size-view ball-and-stick schematic illustrations are cited from Ref. [3].

[1]
Birol T. Stable and switchable polarization in 2D. Nature, 2018, 560, 174 doi: 10.1038/d41586-018-05807-5
[2]
Hoffmann M, Fengler F P G, Herzig M, et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, 2019, 565, 464 doi: 10.1038/s41586-018-0854-z
[3]
Ding W, Zhu J, Wang Z, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat Commun, 2017, 8, 14596 doi: 10.1038/ncomms14596
[4]
Xiao J, Zhu H, Wang Y, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 2018, 120, 227601 doi: 10.1103/PhysRevLett.120.227601
[5]
Zhou Y, Wu D, Zhu Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett, 2017, 17, 5508 doi: 10.1021/acs.nanolett.7b02198
[6]
Wan S, Li Y, Li W, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale, 2018, 10, 14885 doi: 10.1039/C8NR04422H
[7]
Khan A I, Chatterjee K, Wang N, et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 2015, 14, 182 doi: 10.1038/nmat4148
[8]
Si M, Su C, Jiang C, et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat Nano, 2018, 13, 24 doi: 10.1038/s41565-017-0010-1

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    Received: Revised: Online: Accepted Manuscript: 18 May 2019Uncorrected proof: 31 May 2019Published: 05 June 2019

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      Lun Dai. Room-temperature stable two-dimensional ferroelectric materials[J]. Journal of Semiconductors, 2019, 40(6): 060402. doi: 10.1088/1674-4926/40/6/060402 ****L Dai, Room-temperature stable two-dimensional ferroelectric materials[J]. J. Semicond., 2019, 40(6): 060402. doi: 10.1088/1674-4926/40/6/060402.
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      Lun Dai. Room-temperature stable two-dimensional ferroelectric materials[J]. Journal of Semiconductors, 2019, 40(6): 060402. doi: 10.1088/1674-4926/40/6/060402 ****
      L Dai, Room-temperature stable two-dimensional ferroelectric materials[J]. J. Semicond., 2019, 40(6): 060402. doi: 10.1088/1674-4926/40/6/060402.

      Room-temperature stable two-dimensional ferroelectric materials

      DOI: 10.1088/1674-4926/40/6/060402

      • School of Physics, Peking University, Beijing 100871, China

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