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J. Semicond. > 2019, Volume 40?>?Issue 6?> 060401

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Heteroepitaxy of semiconductor thin films

Yi Gu1, 2,

+ Author Affiliations

 Corresponding author: Yi Gu, guyi@mail.sitp.ac.cn

DOI: 10.1088/1674-4926/40/6/060401

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[1]
Chung K, Lee C H, Yi G C. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science, 2010, 330, 655 doi: 10.1126/science.1195403
[2]
Kim J, Bayram C, Park H, et al. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nat Commun, 2014, 5, 4836 doi: 10.1038/ncomms5836
[3]
Alaskar Y, Arafin S, Wickramaratne D, et al. Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer. Adv Funct Mater, 2014, 24, 6629 doi: 10.1002/adfm.v24.42
[4]
Kim Y, Cruz S, Lee K, et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature, 2017, 544, 340 doi: 10.1038/nature22053
[5]
Kong W, Li H, Qiao K, et al. Polarity governs atomic interaction through two-dimensional materials. Nat Mater, 2018, 17, 999 doi: 10.1038/s41563-018-0176-4
Fig. 1.  (Color online) (a) Schematic atomic geometry and (b) schematic epitaxial structure of GaAs thin film on graphene-coated Si substrate[3].

[1]
Chung K, Lee C H, Yi G C. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science, 2010, 330, 655 doi: 10.1126/science.1195403
[2]
Kim J, Bayram C, Park H, et al. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nat Commun, 2014, 5, 4836 doi: 10.1038/ncomms5836
[3]
Alaskar Y, Arafin S, Wickramaratne D, et al. Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer. Adv Funct Mater, 2014, 24, 6629 doi: 10.1002/adfm.v24.42
[4]
Kim Y, Cruz S, Lee K, et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature, 2017, 544, 340 doi: 10.1038/nature22053
[5]
Kong W, Li H, Qiao K, et al. Polarity governs atomic interaction through two-dimensional materials. Nat Mater, 2018, 17, 999 doi: 10.1038/s41563-018-0176-4

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    Received: Revised: Online: Accepted Manuscript: 04 April 2019Uncorrected proof: 31 May 2019Published: 05 June 2019

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      Yi Gu. Heteroepitaxy of semiconductor thin films[J]. Journal of Semiconductors, 2019, 40(6): 060401. doi: 10.1088/1674-4926/40/6/060401 ****Y Gu, Heteroepitaxy of semiconductor thin films[J]. J. Semicond., 2019, 40(6): 060401. doi: 10.1088/1674-4926/40/6/060401.
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      Yi Gu. Heteroepitaxy of semiconductor thin films[J]. Journal of Semiconductors, 2019, 40(6): 060401. doi: 10.1088/1674-4926/40/6/060401 ****
      Y Gu, Heteroepitaxy of semiconductor thin films[J]. J. Semicond., 2019, 40(6): 060401. doi: 10.1088/1674-4926/40/6/060401.

      Heteroepitaxy of semiconductor thin films

      DOI: 10.1088/1674-4926/40/6/060401
      • 1.

        State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

      • 2.

        Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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