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J. Semicond. > 2017, Volume 38?>?Issue 3?> 035001

SEMICONDUCTOR INTEGRATED CIRCUITS

A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

Qin Ge1, , Wei Liu2, Bo Xu1, Feng Qian1 and Changfei Yao1

+ Author Affiliations

 Corresponding author: Qin Ge, Email:geqin_001@163.com

DOI: 10.1088/1674-4926/38/3/035001

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Abstract: A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 μm GaAs pseudomorphic HEMT (PHEMT) technology, demonstrated a flat small signal gain of 12.4±2 dB with a minimum saturated output power (Psat) of 14.2 dBm from 77 to 100 GHz. The typical Psat is better by 16.3 dBm with a flatness of 0.4 dB and the maximum power added efficiency is 6% between 77 and 92 GHz. This result shows that the amplifier delivers output power density of about 470 mW/mm with a total gate output periphery of 100 μm. As far as we know, it is nearly the best power density performance ever published from a single ended GaAs-based PHEMT MMIC at this frequency band.

Key words: W-band, GaAs PHEMT, MMIC, wideband, power amplifier



[1]
Huang P P, Huang T W, Wang H, et al. A 94-GHz 0.35-W power amplifier module. IEEE Trans Microw Theory Tech, 1997, 45(12):2418 doi: 10.1109/22.643854
[2]
Herrick K J, Lardizabal S M, Marsh P F, et al. 95 GHz metamorphic HEMT power amplifiers on GaAs. IEEE MTT-S International Microwave Symposium Digest, 2003, 1:137
[3]
Chiu H C, Ke B Y. High performance V-band GaAs power amplifier and low noise amplifier using low-loss transmission line technology. International High Speed Intelligent Communication Forum (HSIC), 2012:1 https://www.researchgate.net/publication/254036686_High_performance_V-band_GaAs_power_amplifier_and_low_noise_amplifier_using_low-loss_transmission_line_technology
[4]
Tsai Z M, Lin K Y, Wang H. A 71-80 GHz medium power amplifier using 4-mil 0.15-μm GaAs-PHEMT technology. AsiaPacific Microwave Conference Proceedings (APMC), 2011:1130
[5]
Yang X, Yang H, Zhang H Y, et al. A monolithic 60 GHz balanced low noise amplifier. J Semicond, 2015, 36(4):045003 doi: 10.1088/1674-4926/36/4/045003
[6]
Mu L F, Zhang W D, He C D, et al. Design and test of a capacitance detection circuit based on a transimpedance amplifier. J Semicond, 2015, 36(7):075007 doi: 10.1088/1674-4926/36/7/075007
[7]
Zhao H, Yao H F, Ding P, et al. A full W-band low noise amplifier module for millimeter-wave applications. J Semicond, 2015, 36(9):095001 doi: 10.1088/1674-4926/36/9/095001
[8]
Jin J, Shi J, Ai B L, et al. A highly linear power amplifier for WLAN. J Semicond, 2016, 37(2):025006 doi: 10.1088/1674-4926/37/2/025006
[9]
Leong Y C, Weinreb S. Full W-band MMIC medium power amplifier. IEEE MTT-S International Microwave Symposium Digest, 2000, 2:951
[10]
Abbasi M, Zirath H, Angelov I. Q-, V-, and W-band power amplifiers utilizing coupled lines for impedance matching. IEEE MTTS International Microwave Symposium Digest, 2008:863 https://www.researchgate.net/publication/4375488_Q-_V-_and_W-band_power_amplifiers_utilizing_coupled_lines_for_impedance_matching
[11]
Siweris H J, Werthof A, Tischer H, et al. A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends. In Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers, 2000:191 https://www.researchgate.net/publication/3854431_A_mixed_Si_and_GaAs_chip_set_for_millimeter-wave_automotive_radar_front-ends?_sg=KCyWzz1feb-fr0Av_D2_9jO2U4ErtRIv9OYJ31M9fsignInp7LkGqbxVsHwYnA-xOaMa9tCLhrmhuJVlBXru_g
[12]
Morgan M, Weinreb S. A W-band monolithic medium power amplifier. IEEE MTT-S International Microwave Symposium Digest, 2003, 1:133 https://www.researchgate.net/profile/Matthew_Morgan8/publication/4022212_A_W-band_monolithic_medium_power_amplifier/links/54d145f40cf28959aa7ac74c.pdf
[13]
Canales F D, Abbasi M. A 75-90 GHz high linearity MMIC power amplifier with integrated output power detector. IEEE MTT-S International Microwave Symposium Digest, 2013:1 https://www.researchgate.net/publication/261108691_A_75-90_GHz_high_linearity_MMIC_power_amplifier_with_integrated_output_power_detector
[14]
Chang H Y, Wang H, Yu M, et al. A 77-GHz MMIC power amplifier for automotive radar applications. IEEE Microw Wireless Compon Lett, 2003, 13(4):143 doi: 10.1109/LMWC.2003.811059
[15]
Lai K T, Wu K L, Hu R, et al. 77 GHz power amplifier design using WIN 0.1μm GaAs pHEMT process. General Assembly and Scientific Symposium (URSI GASS), 2014:1
[16]
Bessemoulin A, Rodriguez M, Tarazi J, et al. Compact W-band PA MMICs in commercially available 0.1-μm GaAs PHEMT process. IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015:1
Fig. 1.  (a) The unit current gain ( $H_{21}$ ) and small signal power gain (MSG/MAG) of the 0.1 μm GaAs pHEMT at drain voltage of 3 V, (b) I-V curves of GaAs PHEMT with width of 4 × 25 μm.

Fig. 2.  Schematic diagram of the each stage unit.

Fig. 3.  Microphotograph of the four-stage MMIC power amplifier with a chip size of 4.2 × 1.5 mm2.

Fig. 4.  Measured small signal gain and input/output return loss from 75 to 100 GHz for the power amplifier MMIC on wafer at the bias of $V_{\rm ds}=$ 3 V, $I_{\rm DS}=$ 126 mA.

Fig. 5.  Photograph of the packaged power amplifier module.

Fig. 6.  Through line insertion loss of the test fixture with two microstrip-line to antipodal finline waveguide transitions back to back.

Fig. 7.  Saturation power performance versus frequency for the PA MMIC at a constant input power of 9 dBm at $V_{\rm ds}=$ 4 V.

Table 1.   Comparison of previously published V-(70 GHz) to W-band single ended GaAs PA MMIC and this work.

PHEMT MMIC technologyCHIP SIZE(MM2)FREQUENCY(GHz)Output total gate periphery (μm)Psat (dBm)Output power density(mW/mm)
4-mil 0.15-μm?[4]?1.85×1.471-8040018.8190
2-mil 0.1-μm?[9]?2.3×1.275-11032015106
4-mil 0.13-μm?[11]?2.0×1.076.524015132
2-mil 0.1-μm?[12]?2.6×0.8472-9564021203
2-mil 0.1-μm?[13]?2.5×0.8575-9020020500
4-mil 0.1-μm?[14]?3.0×2.077-7864021.5219
2-mil 0.1-μm?[15]?2.5×1.0774008.618
2-mil 0.1-μm?[16]?1.8×1.9580-10080024.5350
2-mil 0.1-μm4.2×1.577-100100>14.2>260 470
(this work)77 - 9216.7
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[1]
Huang P P, Huang T W, Wang H, et al. A 94-GHz 0.35-W power amplifier module. IEEE Trans Microw Theory Tech, 1997, 45(12):2418 doi: 10.1109/22.643854
[2]
Herrick K J, Lardizabal S M, Marsh P F, et al. 95 GHz metamorphic HEMT power amplifiers on GaAs. IEEE MTT-S International Microwave Symposium Digest, 2003, 1:137
[3]
Chiu H C, Ke B Y. High performance V-band GaAs power amplifier and low noise amplifier using low-loss transmission line technology. International High Speed Intelligent Communication Forum (HSIC), 2012:1 https://www.researchgate.net/publication/254036686_High_performance_V-band_GaAs_power_amplifier_and_low_noise_amplifier_using_low-loss_transmission_line_technology
[4]
Tsai Z M, Lin K Y, Wang H. A 71-80 GHz medium power amplifier using 4-mil 0.15-μm GaAs-PHEMT technology. AsiaPacific Microwave Conference Proceedings (APMC), 2011:1130
[5]
Yang X, Yang H, Zhang H Y, et al. A monolithic 60 GHz balanced low noise amplifier. J Semicond, 2015, 36(4):045003 doi: 10.1088/1674-4926/36/4/045003
[6]
Mu L F, Zhang W D, He C D, et al. Design and test of a capacitance detection circuit based on a transimpedance amplifier. J Semicond, 2015, 36(7):075007 doi: 10.1088/1674-4926/36/7/075007
[7]
Zhao H, Yao H F, Ding P, et al. A full W-band low noise amplifier module for millimeter-wave applications. J Semicond, 2015, 36(9):095001 doi: 10.1088/1674-4926/36/9/095001
[8]
Jin J, Shi J, Ai B L, et al. A highly linear power amplifier for WLAN. J Semicond, 2016, 37(2):025006 doi: 10.1088/1674-4926/37/2/025006
[9]
Leong Y C, Weinreb S. Full W-band MMIC medium power amplifier. IEEE MTT-S International Microwave Symposium Digest, 2000, 2:951
[10]
Abbasi M, Zirath H, Angelov I. Q-, V-, and W-band power amplifiers utilizing coupled lines for impedance matching. IEEE MTTS International Microwave Symposium Digest, 2008:863 https://www.researchgate.net/publication/4375488_Q-_V-_and_W-band_power_amplifiers_utilizing_coupled_lines_for_impedance_matching
[11]
Siweris H J, Werthof A, Tischer H, et al. A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends. In Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers, 2000:191 https://www.researchgate.net/publication/3854431_A_mixed_Si_and_GaAs_chip_set_for_millimeter-wave_automotive_radar_front-ends?_sg=KCyWzz1feb-fr0Av_D2_9jO2U4ErtRIv9OYJ31M9fsignInp7LkGqbxVsHwYnA-xOaMa9tCLhrmhuJVlBXru_g
[12]
Morgan M, Weinreb S. A W-band monolithic medium power amplifier. IEEE MTT-S International Microwave Symposium Digest, 2003, 1:133 https://www.researchgate.net/profile/Matthew_Morgan8/publication/4022212_A_W-band_monolithic_medium_power_amplifier/links/54d145f40cf28959aa7ac74c.pdf
[13]
Canales F D, Abbasi M. A 75-90 GHz high linearity MMIC power amplifier with integrated output power detector. IEEE MTT-S International Microwave Symposium Digest, 2013:1 https://www.researchgate.net/publication/261108691_A_75-90_GHz_high_linearity_MMIC_power_amplifier_with_integrated_output_power_detector
[14]
Chang H Y, Wang H, Yu M, et al. A 77-GHz MMIC power amplifier for automotive radar applications. IEEE Microw Wireless Compon Lett, 2003, 13(4):143 doi: 10.1109/LMWC.2003.811059
[15]
Lai K T, Wu K L, Hu R, et al. 77 GHz power amplifier design using WIN 0.1μm GaAs pHEMT process. General Assembly and Scientific Symposium (URSI GASS), 2014:1
[16]
Bessemoulin A, Rodriguez M, Tarazi J, et al. Compact W-band PA MMICs in commercially available 0.1-μm GaAs PHEMT process. IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015:1

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    Received: 23 July 2016 Revised: 22 September 2016 Online: Published: 01 March 2017

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      Qin Ge, Wei Liu, Bo Xu, Feng Qian, Changfei Yao. A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology[J]. Journal of Semiconductors, 2017, 38(3): 035001. doi: 10.1088/1674-4926/38/3/035001 ****Q Ge, W Liu, B Xu, F Qian, C F Yao. A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology[J]. J. Semicond., 2017, 38(3): 035001. doi: 10.1088/1674-4926/38/3/035001.
      Citation:
      Qin Ge, Wei Liu, Bo Xu, Feng Qian, Changfei Yao. A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology[J]. Journal of Semiconductors, 2017, 38(3): 035001. doi: 10.1088/1674-4926/38/3/035001 ****
      Q Ge, W Liu, B Xu, F Qian, C F Yao. A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology[J]. J. Semicond., 2017, 38(3): 035001. doi: 10.1088/1674-4926/38/3/035001.

      A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

      DOI: 10.1088/1674-4926/38/3/035001
      • 1.

        Nanjing Electronic Devices Institute, Nanjing 210016, China

      • 2.

        Air Force Military Representative Office in Jiangsu Province, Nanjing 210016, China

      More Information
      • Corresponding author: Qin Ge, Email:geqin_001@163.com
      • Received Date: 2016-07-23
      • Revised Date: 2016-09-22
      • Published Date: 2017-03-01

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