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Chin. J. Semicond. > 1994, Volume 15?>?Issue 7?> 501-504

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高遷移率Si/Si0.7Ge0.3/Si調(diào)制摻雜異質(zhì)結(jié)構(gòu)的生長和輸運性質(zhì)

江若璉,劉建林,李海峰,鄭厚植

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1994

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      江若璉,劉建林,李海峰,鄭厚植. 高遷移率Si/Si0.7Ge0.3/Si調(diào)制摻雜異質(zhì)結(jié)構(gòu)的生長和輸運性質(zhì)[J]. 半導體學報(英文版), 1994, 15(7): 501-504.
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      江若璉,劉建林,李海峰,鄭厚植. 高遷移率Si/Si0.7Ge0.3/Si調(diào)制摻雜異質(zhì)結(jié)構(gòu)的生長和輸運性質(zhì)[J]. 半導體學報(英文版), 1994, 15(7): 501-504.

      • Received Date: 2015-08-18

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