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J. Semicond. > 2008, Volume 29?>?Issue 4?> 737-740

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Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz

Zhao Yuhang, Hu Shaojian and Ren Zheng

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Abstract: An accurate method to extract substrate resistances of RF MOSFETs is proposed.The extraction method is based on equivalent circuit analysis for the PSP model.This method is experimentally validated on 90nm CMOS technology and predicts the output characteristics of MOSFETs accurately up to 20GHz.

Key words: PSP model, RF modeling, RF MOSFETs, substrate resistance

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    Received: 18 August 2015 Revised: 26 November 2007 Online: Published: 01 April 2008

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      Zhao Yuhang, Hu Shaojian, Ren Zheng. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. Journal of Semiconductors, 2008, 29(4): 737-740. ****Zhao Y H, Hu S J, Ren Z. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. J. Semicond., 2008, 29(4): 737.
      Citation:
      Zhao Yuhang, Hu Shaojian, Ren Zheng. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. Journal of Semiconductors, 2008, 29(4): 737-740. ****
      Zhao Y H, Hu S J, Ren Z. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. J. Semicond., 2008, 29(4): 737.

      Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz

      • Shanghai IC R & D Center,Shanghai 201203,China

      • Shanghai IC R & D Center,Shanghai 201203,China

      • Shanghai IC R & D Center,Shanghai 201203,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-28
      • Revised Date: 2007-11-26
      • Published Date: 2008-04-03

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