J. Semicond. > 2008, Volume 29?>?Issue 1?> 153-156

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Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes

Wang Xinhua, Wang Xiaoliang, Feng Chun, Ran Junxue, Xiao Hongling, Yang Cuibai, Wang Baozhu and Wang Junxi

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Abstract: Hydrogen sensors based on AlGaN/GaN back-to-back Schottky diodes have been produced.Platinum is sputtered on the surface of the sample.The response of the device to 10% H2 in N2 is measured at 25~100℃.The oxygen in the air has great influence on the current of the device.Finally,the variation of the Schottky barrier height induced by the hydrogen is calculated.

Key words: GaN,  gas sensor,  Schottky diode

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    Received: 18 August 2015 Revised: 10 August 2007 Online: Published: 01 January 2008

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      Wang Xinhua, Wang Xiaoliang, Feng Chun, Ran Junxue, Xiao Hongling, Yang Cuibai, Wang Baozhu, Wang Junxi. Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes[J]. Journal of Semiconductors, 2008, 29(1): 153-156. ****Wang X H, Wang X L, Feng C, Ran J X, Xiao H L, Yang C B, Wang B Z, Wang J X. Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes[J]. J. Semicond., 2008, 29(1): 153.
      Citation:
      Wang Xinhua, Wang Xiaoliang, Feng Chun, Ran Junxue, Xiao Hongling, Yang Cuibai, Wang Baozhu, Wang Junxi. Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes[J]. Journal of Semiconductors, 2008, 29(1): 153-156. ****
      Wang X H, Wang X L, Feng C, Ran J X, Xiao H L, Yang C B, Wang B Z, Wang J X. Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes[J]. J. Semicond., 2008, 29(1): 153.

      Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-05
      • Revised Date: 2007-08-10
      • Published Date: 2007-12-26

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