Abstract: optical proximity correction (OPC) is a key step in nanometer scale lithography technology.Currently,dissection in OPC is recipe-based.However,as the critical features shrink and the layout becomes more complicated,it is hard to debug and handle all possible cases in the layout;Incomplete recipe-based dissection will introduce or worsen the effects of ripple,breaking,bridging,and line-end shortening.This paper presents a new dissection method,which is lithographic model-based and can dynamically change the dissection and sampling point positions during OPC correction loops.According to experiments on 90nm designs,the new dissection method can reduce 10%~15% of segments,save considerable time during recipe debugging,improve OPC quality,and reduce hot spot errors rates by 35%.

Key words: OPC, DFM, Dissection, lithography modeling