Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Zhou Zhiwen; Cai Zhimeng; Zhang Yong; Cai Kunhuang; Zhou Bi; Lin Guijiang; Wang Jianyuan; Li Cheng; Lai Hongkai; Chen Songyan; Yu Jinzhong; Wang Qiming

香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

PDF
Cite
Share

facebook

twitter

mendeley

linkedin

J. Semicond. > 2008, Volume 29?>?Issue 2?> 315-318

PAPERS

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Zhou Zhiwen, Cai Zhimeng, Zhang Yong, Cai Kunhuang, Zhou Bi, Lin Guijiang, Wang Jianyuan, Li Cheng, Lai Hongkai, Chen Songyan, Yu Jinzhong and Wang Qiming

+ Author Affiliations

Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Abstract: Thick Ge epitaxial layers are grown on Si(001) substrates with low temperature buffer layers with ultra-high vacuum chemical vapor deposition systems using Si2H6 and GeH4 as precursors.The deposition process of the Ge layer on Si is investigated in real time by reflection high-energy electron diffraction, and the quality of the Ge layer was evaluated by atomic force microscopy, double crystal X-ray diffraction (XRD), and Raman measurement.The root-mean-square surface roughness of the Ge epilayer with a thickness of 550nm is less than 1nm and the full-width-at-half maximum of the Ge peak of the XRD profile and the Ge-Ge mode of the Raman spectra are about 530" and 5.5cm-1, respectively.These measurements indicate that the Ge epitaxial layer is of good quality.The etch pit density related to threading dislocations is less than 5e5cm-2.This is a promising material for Si-based long wavelength photodetectors and electronic devices

Key words: Ge/Si heteroepitaxy, relaxed buffer, Ge

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 3813 Times PDF downloads: 1394 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 04 August 2007 Online: Published: 01 February 2008

Article Navigation > Journal of Semiconductors > 2008 > 29(2): 315-318

Zhou Zhiwen, Cai Zhimeng, Zhang Yong, Cai Kunhuang, Zhou Bi, Lin Guijiang, Wang Jianyuan, Li Cheng, Lai Hongkai, Chen Songyan, Yu Jinzhong, Wang Qiming. Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD[J]. Journal of Semiconductors, 2008, 29(2): 315-318. ****Zhou Z W, Cai Z M, Zhang Y, Cai K H, Zhou B, Lin G J, Wang J Y, Li C, Lai H K, Chen S Y, Yu J Z, Wang Q M. Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD[J]. J. Semicond., 2008, 29(2): 315.

Citation:

Zhou Z W, Cai Z M, Zhang Y, Cai K H, Zhou B, Lin G J, Wang J Y, Li C, Lai H K, Chen S Y, Yu J Z, Wang Q M. Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD[J]. J. Semicond., 2008, 29(2): 315.

Citation:

PDF( 1214 KB)

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received Date: 2015-08-18
Accepted Date: 2007-07-10
Revised Date: 2007-08-04
Published Date: 2008-01-31

Abstract

Abstract

Thick Ge epitaxial layers are grown on Si(001) substrates with low temperature buffer layers with ultra-high vacuum chemical vapor deposition systems using Si2H6 and GeH4 as precursors.The deposition process of the Ge layer on Si is investigated in real time by reflection high-energy electron diffraction, and the quality of the Ge layer was evaluated by atomic force microscopy, double crystal X-ray diffraction (XRD), and Raman measurement.The root-mean-square surface roughness of the Ge epilayer with a thickness of 550nm is less than 1nm and the full-width-at-half maximum of the Ge peak of the XRD profile and the Ge-Ge mode of the Raman spectra are about 530" and 5.5cm-1, respectively.These measurements indicate that the Ge epitaxial layer is of good quality.The etch pit density related to threading dislocations is less than 5e5cm-2.This is a promising material for Si-based long wavelength photodetectors and electronic devices
- Ge/Si heteroepitaxy,
- relaxed buffer,
- Ge

FullText(HTML)

References(0)

References

香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Abstract

References

Proportional views

Catalog

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content